PPJU14P06
/ PJD14P06
60V P-Channel Enhancement Mode MOSFET
Voltage
Features
R
DS(ON)
, V
GS
@-10V,I
D
@-7A<115mΩ
R
DS(ON)
, V
GS
@-4.5V,I
D
@-3.5A<160mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
TO-252
TO-251AB
-60 V
Current
-14 A
(Halogen Free)
Mechanical Data
Case: TO-251AB, TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
Single Pulse Avalanche Energy
(Note 2)
Power Dissipation
T
C
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J
,T
STG
LIMIT
UNITS
V
V
A
A
mJ
W
W/
o
C
o
-60
+20
-14
-32
42
45
0.3
-55~175
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
-
Junction to Case
Junction to Ambient
(Note 1)
Limited only By Maximum Junction Temperature
C
R
θJC
R
θJA
3.33
62.5
C/W
June 11,2015-REV.01
Page 1
PPJU14P06
/ PJD14P06
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
I
S
trr
Qrr
---
V
GS
=0V, I
S
=-12A
dI
F
/ dt=-100A/us
(Note 2)
-
-
-
-
28
42
-10
-
-
A
ns
nC
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
t
r
td
(off)
t
f
V
DS
=-30V, I
D
=-12A,
V
GS
=-10V
(Note 2,3)
V
DS
=-30V, V
GS
=0V,
f=1.0MHZ
V
DS
=-30V,RL=2.5Ω,
V
GS
=-10V, R
G
=6.2Ω
(Note 2,3)
o
SYMBOL
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
SD
TEST CONDITION
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=-250uA
V
GS
=-10V,I
D
=-7A
V
GS
=-4.5V,I
D
=-3.5A
V
DS
=-55V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
I
S
=-1A,V
GS
=0V
MIN.
-60
-2.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-2.76
96
125
-0.01
+10
-0.78
13.4
3.4
3.0
685
63
29
7
40
23
10
MAX.
-
-3.2
115
160
-1.0
+100
-1.0
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
mΩ
uA
nA
V
nC
pF
ns
NOTES :
1. The test by surface mounted on 1 inch FR4 board with 2oz copper.
2. L=0.1mH, I
AS
=-29A, V
GS
=-10V, V
DS
=-25V, R
G
=25 ohm, Starting T
J
=25
o
C
3.
4.
5.
The Power dissipation is limit by 150℃ junction temperature.
Pulse width<300us, Duty cycle<2%
Guaranteed by design, not subject to production testing.
June 11,2015-REV.01
Page 2
PPJU14P06
/ PJD14P06
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
June 11,2015-REV.01
Page 3
PPJU14P06
/ PJD14P06
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
Fig.11 Maximum Safe Operating Area
June 11,2015-REV.01
Page 4
PPJU14P06
/ PJD14P06
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Thermal Transient Impedance
June 11,2015-REV.01
Page 5
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