PPJX8806
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
20 V
Current
800mA
SOT-563
Unit : inch(mm)
R
DS(ON)
, V
GS
@4.5V,I
DS
@500mA=0.4Ω
R
DS(ON)
, V
GS
@2.5V,I
DS
@300mA=0.7Ω
R
DS(ON)
, V
GS
@1.8V,I
DS
@100mA=1.2Ω(typ)
Advanced Trench Process Technology
Specially Designed for Load Switch or PWM application.
ESD Protected
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-563 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00009 ounces, 0.0026 grams
Marking: X06
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
o
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
A
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
PD
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
mA
mA
mW
mW/
o
C
o
20
+12
800
3000
350
2.8
-55~150
357
o
Operating Junction and Storage Temperature Range
Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
April 19,2013-REV.00
Page 1
PPJX8806
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=500mA, V
GS
=0V
-
-
0.91
500
1.3
mA
V
td
(on)
tr
td
(off)
tf
V
DD
=10V, I
D
=500mA,
V
GS
=4.5V,
R
G
=6Ω
(Note 1,2)
-
-
-
-
4
20
12
25
-
-
-
-
ns
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
V
DS
=10V, I
D
=500mA,
V
GS
=4.5V
(Note 1,2)
V
DS
=10V, V
GS
=0V,
f=1.0MHZ
-
-
-
-
-
-
0.92
0.31
0.08
50
10
8.5
pF
-
-
-
nC
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
GS
=4.5V,I
D
=500mA
V
GS
=2.5V,I
D
=300mA
V
GS
=1.8V,I
D
=100mA
V
DS
=16V,V
GS
=0V
V
GS
=+10V,V
DS
=0V
20
0.4
-
-
-
-
-
-
0.7
0.35
0.6
1.2
0.02
+2
1
+10
uA
uA
-
1.1
0.4
0.7
Ω
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES:
1. Pulse width<300us, Duty cycle<2%
2.
3.
Essentially independent of operating temperature typical characteristics.
R
ΘJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
April 19,2013-REV.00
Page 2
PPJX8806
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Dlode Characterlslcs
April 19,2013-REV.00
Page 3
PPJX8806
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature
April 19,2013-REV.00
Page 4
PPJX8806
PART NO PACKING CODE VERSION
PART NO PACKING
Package Type
CODE VERSION
PJX8806_R1_00001
PJX8806_R2_00001
SOT-563
SOT-563
4K pcs / 7” reel
10K pcs / 13” reel
X06
X06
Halogen free
Halogen free
Packing type
Marking
Version
MOUNTING PAD LAYOUT
April 19,2013-REV.00
Page 5
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