PPJQ5474A
100V N-Channel Enhancement Mode MOSFET
Voltage
Features
100 V
Current
18A
DFN5060-8L
R
DS(ON) ,
V
GS
@10V, ID@18A<50mΩ
R
DS(ON)
, V
GS
@4.5V, ID@15A<55mΩ
Advanced Trench Process Technology
High density cell design for ultra low on-resistance
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN5060-8L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0028 ounces, 0.08 grams
Marking: Q5474A
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
o
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
(Note 5)
Power Dissipation
T
C
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J
,T
STG
R
θJC
LIMIT
UNITS
V
V
A
A
mJ
W
mW/
o
C
o
100
+20
18
36
16.2
52
416
-55~150
2.4
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient, t<10s
(Note 3)
C
C/W
July 14,2015-REV.00
Page 1
PPJQ5474A
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 7)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=1.0A, V
GS
=0V
-
-
-
0.7
18
1.2
A
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=80V, I
D
=18A,
V
GS
=10V
(Note 1,2)
V
DS
=15V, V
GS
=0V,
f=1.0MHZ
V
DD
=50V, I
D
=18A,
V
GS
=10V,
R
G
=3.3Ω
(Note 1,2)
-
-
-
-
-
-
-
-
-
-
61
8.8
11
3555
119
56
16
50
64
18
-
-
-
-
-
-
-
-
-
-
ns
pF
nC
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V,I
D
=18A
V
GS
=4.5V,I
D
=15A
V
DS
=80V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
100
1.0
-
-
-
-
-
1.5
37
38
0.03
+10
-
2.5
50
55
1.0
+100
mΩ
uA
nA
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. The maximum current rating is package limited.
4. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
5. The test condition is L=0.1mH, I
AS
=18A, V
DD
=25V, V
GS
=10V
6. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch
2
with 2oz.square pad of copper.
7. Guaranteed by design, not subject to production testing.
July 14,2015-REV.00
Page 2
PPJQ5474A
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
July 14,2015-REV.00
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PPJQ5474A
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
Fig.11 Maximum Safe Operating Area
July 14,2015-REV.00
Page 4
PPJQ5474A
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
July 14,2015-REV.00
Page 5
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