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PJSD24TS

Protection Device TVS/ESD Arrays

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

下载文档
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
R-PDSO-F2
针数
2
Reach Compliance Code
compli
ECCN代码
EAR99
最小击穿电压
26.7 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PDSO-F2
最大非重复峰值反向功率耗散
120 W
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-50 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
认证状态
Not Qualified
最大重复峰值反向电压
24 V
表面贴装
YES
技术
AVALANCHE
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
PJSD03TS~PJSD36TS
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE
FEATURES
• 120 Watts peak pules power( tp=8/20μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
0.034(0.85)
0.029(0.75)
0.050(1.25)
0.045(1.15)
3~36 Volts
POWER
120 Watts
SOD-523
Unit
inch(mm)
0.014(0.35)
0.009(0.25)
0.026(0.65)
0.021(0.55)
APPLICATIONS
• Case: SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight: 0.0014 grams
• Marking : PJSD03TS : KD
PJSD05TS : KE
PJSD07TS : KF
PJSD08TS : KR
PJSD12TS : LE
PJSD15TS : LM
PJSD24TS : LZ
PJSD36TS : MP
1
2
0.006(0.15)
0.002(0.05)
0.067(1.70)
0.059(1.50)
0.20 MIN.
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power Dissipation (tp=8/20
μs)
ESD Voltage
Operating Temperature
Storage Temperature
Symbol
P
PP
V
ESD
T
J
T
STG
Value
120
25
-50 to +150
-50 to +150
Units
W
KV
O
C
C
O
ELECTRICALCHATACTERISTICS
PJSD03TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=3.3V
I
PP
=5A
0Vdc Bias=f=1MHz
3.3Vdc Bias=f=1MHz
Min.
-
4
-
-
-
-
Typical
-
-
-
-
-
-
Max.
3.3
-
200
6.5
200
100
Units
V
V
μA
V
pF
pF
July 20.2010-REV.00
PAGE . 1
PJSD03TS~PJSD36TS
PJSD05TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=5V
I
PP
=5A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
Min.
-
6.0
-
-
-
-
Typical
-
-
-
-
-
-
Max.
5
-
5
9
110
60
Units
V
V
μA
V
pF
pF
PJSD07TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=7V
I
PP
=8.8A
0Vdc Bias=f=1MHz
Min.
-
7.5
-
-
-
Typical
-
-
-
-
-
Max.
7.0
-
150
22.7
85
Units
V
V
nA
V
pF
PJSD08TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=8V
I
PP
=5A
0Vdc Bias=f=1MHz
Min.
-
8.5
-
-
-
Typical
-
-
-
-
-
Max.
8
-
5
13
70
Units
V
V
μA
V
pF
PJSD12TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=12V
I
PP
=5A
0Vdc Bias=f=1MHz
Min.
-
13.3
-
-
-
Typical
-
-
-
-
-
Max.
12
-
5
17
60
Units
V
V
μA
V
pF
July 20.2010-REV.00
PAGE . 2
PJSD03TS~PJSD36TS
PJSD15TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=15V
I
PP
=5A
0Vdc Bias=f=1MHz
Min.
-
16.6
-
-
-
Typical
-
-
-
-
-
Max.
15
-
5
22
50
Units
V
V
μA
V
pF
PJSD24TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=24V
I
PP
=3A
0Vdc Bias=f=1MHz
Min.
-
26.7
-
-
-
Typical
-
-
-
-
-
Max.
24
-
5
32
25
Units
V
V
μA
V
pF
PJSD36TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Conditions
-
I
BR
=1mA
V
R
=36V
I
PP
=1A
0Vdc Bias=f=1MHz
Min.
-
40
-
-
-
Typical
-
-
-
-
-
Max.
36
-
5
55
20
Units
V
V
μA
V
pF
July 20.2010-REV.00
PAGE . 3
PJSD03TS~PJSD36TS
I
PP
-Peak Pulse Current-% of I
PP
120
t
f
100
80
e
60
40
20
0
0
5
10
t
d
=t I
PP
/2
-t
100
Peak Value I
PP
TEST
m
m
%Of Rated Power
WAVEFORM
PARAMETERS
80
60
40
20
0
Peak Pulse Power
8/20
m
s
Average Power
0
25
50
75
100
125 150
O
15
T-Time-
m
s
20
25
30
T
L
-Lead Temperature- C
FIG. 2-Power Derating Curve
FIG. 1- Pulse Wave Form
P
PP
-Peak Pulse Current-Watts
10000
1000
100
10
0.01
1
10
100
1000
10000
t
d
-Pulse Duration-
m
s
FIG. 3-Peak Pulse Power vs Pulse Time
July 20.2010-REV.00
PAGE . 4
PJSD03TS~PJSD36TS
MOUNTING PAD LAYOUT
SOD-523
Unit
inch(mm)
0.016
(0.40)
0.039
(1.00)
0.016
(0.40)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 5K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
July 20.2010-REV.00
0.016
(0.40)
PAGE . 5
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