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PJSD24TS-AU_R2_000A1

Trans Voltage Suppressor Diode, 120W, 24V V(RWM), Unidirectional, 1 Element, Silicon,

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

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器件参数
参数名称
属性值
厂商名称
强茂(PANJIT)
包装说明
R-PDSO-F2
Reach Compliance Code
compliant
ECCN代码
EAR99
最小击穿电压
26.7 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PDSO-F2
最大非重复峰值反向功率耗散
120 W
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-50 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性
UNIDIRECTIONAL
参考标准
AEC-Q101; TS 16949
最大重复峰值反向电压
24 V
表面贴装
YES
技术
AVALANCHE
端子形式
FLAT
端子位置
DUAL
文档预览
PJSD03TS-AU~PJSD36TS-AU
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE
FEATURES
• 120 Watts peak pules power( tp=8/20
μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• Acquire quality system certificate : TS16949
• AEC-Q101 qualified
• Lead free in compliance with EU RoHS 201
1/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.067(1.70)
0.059(1.50)
0.006(0.15)
0.002(0.05)
0.034(0.85)
0.029(0.75)
0.050(1.25)
0.045(1.15)
0.014(0.35)
0.009(0.25)
0.026(0.65)
0.021(0.55)
3~36 Volt
POWER
120 Watt
APPLICATIONS
• Case: SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight: 0.00005 ounces, 0.0014 grams
• Marking : PJSD03TS-AU : KD
PJSD05TS-AU : KE
PJSD07TS-AU : KF
PJSD08TS-AU : KR
PJSD12TS-AU : LE
PJSD15TS-AU : LM
PJSD24TS-AU : LZ
PJSD36TS-AU : MP
1
2
0.20 MIN.
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power Dissipation (tp=8/20
μs)
ESD Voltage
Operating Temperature
Storage Temperature
Symbol
P
PP
V
ESD
T
J
T
STG
Value
120
25
-50 to +150
-50 to +150
Units
W
KV
O
C
C
O
ELECTRICALCHATACTERISTICS
PJSD03TS-AU
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
Conditions
-
I
BR
Min.
-
4
-
-
-
-
Typical
-
-
-
-
-
-
Max.
3.3
-
200
6.5
200
100
Units
V
V
μA
V
pF
pF
=1mA
V
R
=3.3V
I
PP
V
C
C
J
C
J
=5A
0Vdc Bias=f=1MHz
3.3Vdc Bias=f=1MHz
April 8,2016-REV.02
PAGE . 1
PJSD03TS-AU~PJSD36TS-AU
PJSD05TS-AU
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
Conditions
-
I
BR
Min.
-
6.0
-
-
-
-
Typical
-
-
-
-
-
-
Max.
5
-
5
9
110
60
Units
V
V
μA
V
pF
pF
=1mA
V
R
=5V
I
PP
V
C
C
J
C
J
=5A
0Vdc Bias=f=1MHz
5Vdc Bias=f=1MHz
PJSD07TS-AU
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
Conditions
-
I
BR
Min.
-
7.5
-
-
-
Typical
-
-
-
-
-
Max.
7.0
-
150
22.7
85
Units
V
V
nA
V
pF
=1mA
V
R
=7V
I
PP
V
C
C
J
=8.8A
0Vdc Bias=f=1MHz
PJSD08TS-AU
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
Conditions
-
I
BR
Min.
-
8.5
-
-
-
Typical
-
-
-
-
-
Max.
8
-
5
13
70
Units
V
V
μA
V
pF
=1mA
V
R
=8V
I
PP
V
C
C
J
=5A
0Vdc Bias=f=1MHz
PJSD12TS-AU
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
Conditions
-
I
BR
Min.
-
13.3
-
-
-
Typical
-
-
-
-
-
Max.
12
-
5
17
60
Units
V
V
μA
V
pF
=1mA
V
R
=12V
I
PP
V
C
C
J
=5A
0Vdc Bias=f=1MHz
April 8,2016-REV.02
PAGE . 2
PJSD03TS-AU~PJSD36TS-AU
PJSD15TS-AU
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
Conditions
-
I
BR
Min.
-
16.6
-
-
-
Typical
-
-
-
-
-
Max.
15
-
5
22
50
Units
V
V
μA
V
pF
=1mA
V
R
=15V
I
PP
V
C
C
J
=5A
0Vdc Bias=f=1MHz
PJSD24TS-AU
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
Conditions
-
I
BR
Min.
-
26.7
-
-
-
Typical
-
-
-
-
-
Max.
24
-
5
32
25
Units
V
V
μA
V
pF
=1mA
V
R
=24V
I
PP
V
C
C
J
=3A
0Vdc Bias=f=1MHz
PJSD36TS-AU
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
Conditions
-
I
BR
Min.
-
40
-
-
-
Typical
-
-
-
-
-
Max.
36
-
5
55
20
Units
V
V
μA
V
pF
=1mA
V
R
=36V
I
PP
V
C
C
J
=1A
0Vdc Bias=f=1MHz
PAGE . 3
PJSD03TS-AU~PJSD36TS-AU
I
PP
-Peak Pulse Current-% of I
PP
120
t
f
100
80
e
60
40
20
0
0
5
10
t
d
=t I
PP
/2
-t
100
Peak Value I
PP
TEST
m
m
%Of Rated Power
WAVEFORM
PARAMETERS
80
60
40
20
0
Peak Pulse Power
8/20
m
s
Average Power
0
25
50
75
100
125 150
15
T-Time-
m
s
20
25
30
T
L
-Lead Temperature-
O
C
FIG. 2-Power Derating Curve
FIG. 1- Pulse Wave Form
P
PP
-Peak Pulse Current-Watts
10000
1000
100
10
0.01
1
10
100
1000
10000
t
d
-Pulse Duration-
m
s
FIG. 3-Peak Pulse Power vs Pulse Time
PAGE . 4
PJSD03TS-AU~PJSD36TS-AU
PART NO PACKING CODE VERSION
Part No Packing Code
PJSD03TS-AU_R1_000A1
PJSD03TS-AU_R2_000A1
Package Type
SOD-523
SOD-523
Packing Type
5K pcs / 7" reel
12K pcs / 13" reel
Marking
KD
KD
Version
Halogen free
Halogen free
MOUNTING PAD LAYOUT
PAGE . 5
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