PJSMS05C SERIES
PENTA TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION
This 5 TVS/Zener Array family have been designed to Protect Sensitive
Equipment against ESD and to prevent Latch-Up events in CMOS circuitry
operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated
solution to protect up to 5 data lines where the board space is a premium.
SPECIFICATION FEATURES
350W Power Dissipation (8/20µs Waveform)
Low Leakage Current, Maximum of 5µA at rated voltage
Very Low Clamping Voltage
IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance
Industry Standard Surface Mount Package SOT23-6L
100% Tin Matte Finish (RoHS Compliant)
1
6
5
4
APPLICATIONS
Personal Digital Assistant (PDA)
SIM Card Port Protection (Mobile Phone)
Portable Instrumentation
Mobile Phones and Accessories
Memory Card Port Protection
1
2
3
SOT23-6L
MAXIMUM RATINGS (Per Device)
Rating
Peak Pulse Power (8/20µs Waveform)
ESD Voltage (HBM)
Operating Temperature Range
Storage Temperature Range
Symbol
P
pp
V
ESD
TJ
T
stg
Device
Marking Code
PJSMS05C
MD5
PJSMS12C
MA2
PJSMS15C
MA5
PJSMS24C
MB4
Value
350
>25
-50 to +125
-50 to +150
Units
W
kV
°C
°C
ELECTRICAL CHARACTERISTICS (Per Device)
Tj = 25°C
PJSMS05C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
c
V
c
Cj
Cj
I
BR
= 1mA
V
R
= 5V
I pp = 5A
I pp = 24A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
5 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
5
Units
V
V
6
5
9.5
13
200
110
µA
V
V
pF
pF
1/13/2009
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1
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PJSMS05C SERIES
ELECTRICAL CHARACTERISTICS (Per Device)
Tj = 25°C
PJSMS12C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 12V
I pp = 5A
I pp = 15A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
12
Units
V
V
13.3
5
17
21
90
µA
V
V
pF
PJSMS15C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 15V
I pp = 5A
I pp = 12A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
15
Units
V
V
16.7
5
22
27
70
µA
V
V
pF
PJSMS24C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 24V
I pp = 5A
I pp = 8A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
24
Units
V
V
26.7
5
35
40
50
µA
V
V
pF
1/13/2009
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PJSMS05C SERIES
TYPICAL CHARACTERISTICS
TJ = 25°C unless otherwise noted
Surge Pulse Waveform Definition
N
on-R
epetitive Peak Pulse Power vs Pulse Time
Pulse Waveform
Peak Pulse Power - Ppp (W)
110
100
90
80
70
60
50
40
30
20
10
0
0
1000
100
10
1
0.1
0.01
1
10
100
1000
Pulse D
uration, µsec
Percent of Ipp
50% of Ipp @ 20µs
Rise time 10-90% - 8µs
5
10
15
tim e, µsec
20
25
30
Clamping Voltage vs. Peak current
45
40
35
30
25
20
15
10
5
0
0
5
Off-State Capacitance per Device - 1MHz
200
180
160
140
120
100
80
60
40
20
0
0
Clamping voltage, V
PJSMS24C
PJS 24
MS
PJSMS05C
PJSMS05
PJS 15
MS
PJSMS15C
PJS 12
MS
PJSMS12C
PJS 05
MS
PJSMS05C
Capacitance, pF
PJSMS12C
PJSMS1
2
PJSMS15C
PJSMS1
5
PJSMS24C
PJSMS24
10
15
20
25
30
1
2
3
4
5
Ipp, A (8/20µsec)
Bias, Vdc
1/13/2009
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PJSMS05C SERIES
PACKAGE AND PAD LAYOUT DIMENSIONS
© Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
1/13/2009
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