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PJSMS12C

Protection Device TVS/ESD Arrays

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
R-PDSO-G6
针数
6
Reach Compliance Code
compli
ECCN代码
EAR99
最小击穿电压
13.3 V
最大钳位电压
21 V
配置
COMMON ANODE, 5 ELEMENTS
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PDSO-G6
JESD-609代码
e3
最大非重复峰值反向功率耗散
350 W
元件数量
5
端子数量
6
最高工作温度
125 °C
最低工作温度
-50 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
BIDIRECTIONAL
最大重复峰值反向电压
12 V
表面贴装
YES
技术
ZENER
端子面层
MATTE TIN
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
PJSMS05C SERIES
PENTA TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION
This 5 TVS/Zener Array family have been designed to Protect Sensitive
Equipment against ESD and to prevent Latch-Up events in CMOS circuitry
operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated
solution to protect up to 5 data lines where the board space is a premium.
SPECIFICATION FEATURES
350W Power Dissipation (8/20µs Waveform)
Low Leakage Current, Maximum of 5µA at rated voltage
Very Low Clamping Voltage
IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance
Industry Standard Surface Mount Package SOT23-6L
100% Tin Matte Finish (RoHS Compliant)
1
6
5
4
APPLICATIONS
Personal Digital Assistant (PDA)
SIM Card Port Protection (Mobile Phone)
Portable Instrumentation
Mobile Phones and Accessories
Memory Card Port Protection
1
2
3
SOT23-6L
MAXIMUM RATINGS (Per Device)
Rating
Peak Pulse Power (8/20µs Waveform)
ESD Voltage (HBM)
Operating Temperature Range
Storage Temperature Range
Symbol
P
pp
V
ESD
TJ
T
stg
Device
Marking Code
PJSMS05C
MD5
PJSMS12C
MA2
PJSMS15C
MA5
PJSMS24C
MB4
Value
350
>25
-50 to +125
-50 to +150
Units
W
kV
°C
°C
ELECTRICAL CHARACTERISTICS (Per Device)
Tj = 25°C
PJSMS05C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
c
V
c
Cj
Cj
I
BR
= 1mA
V
R
= 5V
I pp = 5A
I pp = 24A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
5 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
5
Units
V
V
6
5
9.5
13
200
110
µA
V
V
pF
pF
November 02,2010-REV.00
Page 1
www.panjit.com
PJSMS05C SERIES
ELECTRICAL CHARACTERISTICS (Per Device)
Tj = 25°C
PJSMS12C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 12V
I pp = 5A
I pp = 15A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
12
Units
V
V
13.3
5
17
21
90
µA
V
V
pF
PJSMS15C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 15V
I pp = 5A
I pp = 12A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
15
Units
V
V
16.7
5
22
27
70
µA
V
V
pF
PJSMS24C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 24V
I pp = 5A
I pp = 8A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
24
Units
V
V
26.7
5
35
40
50
µA
V
V
pF
November 02,2010-REV.00
Page 2
www.panjit.com
PJSMS05C SERIES
TYPICAL CHARACTERISTICS
TJ = 25°C unless otherwise noted
Surge Pulse Waveform Definition
N
on-R
epetitive Peak Pulse Power vs Pulse Time
Pulse Waveform
Peak Pulse Power - Ppp (W)
110
100
90
80
70
60
50
40
30
20
10
0
0
1000
100
10
1
0.1
0.01
1
10
100
1000
Pulse D
uration, µsec
Percent of Ipp
50% of Ipp @ 20µs
Rise time 10-90% - 8µs
5
10
15
tim e, µsec
20
25
30
Clamping Voltage vs. Peak current
45
40
35
30
25
20
15
10
5
0
0
5
Off-State Capacitance per Device - 1MHz
200
180
160
140
120
100
80
60
40
20
0
0
Clamping voltage, V
PJSMS24C
PJS 24
MS
PJSMS05C
PJSMS05
PJS 15
MS
PJSMS15C
PJS 12
MS
PJSMS12C
PJS 05
MS
PJSMS05C
Capacitance, pF
PJSMS12C
PJSMS1
2
PJSMS15C
PJSMS1
5
PJSMS24C
PJSMS24
10
15
20
25
30
1
2
3
4
5
Ipp, A (8/20µsec)
Bias, Vdc
November 02,2010-REV.00
Page 3
www.panjit.com
PJSMS05C SERIES
PACKAGE AND PAD LAYOUT DIMENSIONS
SOT23-6L
SOT23-6L
0.119(3.00)
0.110(2.80)
0.075(1.90)
BSC
0.119(3.00)
0.102(2.60)
0.067(1.70)
0.059(1.50)
0.020(0.50)
0.012(0.30)
0.051(1.30)
0.035(0.90)
0.006(0.15)
MAX.
0.057(1.45)
MAX.
© Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
1/13/2009
0.009(0.22)
0.003(0.08)
Page 4
www.panjit.com
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