首页 > 器件类别 > 分立半导体 > 二极管

PJSMS15-R1-10001

Transient Suppressor,

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

下载文档
器件参数
参数名称
属性值
Reach Compliance Code
compliant
ECCN代码
EAR99
Base Number Matches
1
文档预览
PJSMS05 SERIES
QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION
VOLTAGE
5~24 Volts
POWER
350Watts
SOT-23 6L
Unit
inch(mm)
This Quad TVS/Zener Array family have been designed to Protect Sensitive
Equipment against ESD and to prevent Latch-Up events in CMOS circuitry
operating at 5V,12V,15V and 24V.This TVS array offers an integrated
solution to protect up to 4 data lines where the board space is a premium.
0.119(3.00)
0.110(2.80)
FEATURES
• 350W Power Dissipation (8/20μs Waveform)
• Low Leakage Current, Maximum of 5μA at rated voltage
• Very Low Clamping Voltage
• IEC61000-4-2 ESD +20kV Air, +15kV Contact Compliance
• Industry Standard Surface Mount Package SOT23-6L
• 100% Tin Matte Finish (ROHS Compliance)
0.075(1.90)
BSC
0.119(3.00)
0.102(2.60)
0.067(1.70)
0.059(1.50)
0.009(0.22)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.051(1.30)
0.035(0.90)
0.006(0.15)
MAX.
APPLICATIONS
• Personal Digital Assistant(PDA)
• SIM Card Port Protection (Mobile Phone)
• Portable Instrumentation
• Mobile Phones and Accessories
• Memory Card Port Protection
MECHANICAL DATA
• Case: SOT-23 6L, plastic
• Terminals: solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0005 ounces, 0.014 grams
• Marking :
PJSMS05
M05
PJSMS12
M12
PJSMS15
M15
PJSMS24
M24
ABSOLUTE MAXIMUM RATINGS (Per Device) (T
A
=25 C unless otherwise noted)
o
PARAMETER
P e a k P uls e P o we r (8 /2 0μs Wa ve fo rm)
E S D p e r IE C 6 1 0 0 0 -4 -2 (A i r)
E S D p e r IE C 6 1 0 0 0 -4 -2 (C o nta c t)
Op e ra ti ng J unc ti o n Te mp e ra ture a nd S to ra g e Te mp e ra ture Ra ng e
SYMBOL
P
PP
V
ESD
T
J
,T
S TG
0.057(1.45)
MAX.
VALUE
350
+ 20
+ 15
-55 to +150
UNITS
W
kV
O
C
November 07,2011-REV.02
PAGE . 1
PJSMS05 SERIES
ELECTRICAL CHARACTERISTICS (Per Device) (T
A
=25 C unless otherwise noted)
PJSMS05
PARAMETER
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20μs)
Clamping Voltage (8/20μs)
Off State Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
V
C
C
J
CONDITIONS
-
I
BR
=1mA
V
R
= 5V
I
PP
= 5A
I
PP
=24A
0 Vdc Bias f=1MHz Between
I/O pins and pin 2, 5
MIN.
-
6
-
-
-
-
TYP.
-
-
-
-
-
-
MAX.
5
-
5
9.8
13
225
UNITS
V
V
μA
V
V
pF
o
PJSMS12
PARAMETER
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20μs)
Clamping Voltage (8/20μs)
Off State Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
V
C
C
J
CONDITIONS
-
I
BR
=1mA
V
R
= 12V
I
PP
= 5A
I
PP
=15A
0 Vdc Bias f=1MHz Between
I/O pins and pin 2, 5
MIN.
-
13.3
-
-
-
-
TYP.
-
-
-
-
-
-
MAX.
12
-
1
20
25
100
UNITS
V
V
μA
V
V
pF
PJSMS15
PARAMETER
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20μs)
Clamping Voltage (8/20μs)
Off State Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
V
C
C
J
CONDITIONS
-
I
BR
=1mA
V
R
= 15V
I
PP
= 5A
I
PP
=12A
0 Vdc Bias f=1MHz Between
I/O pins and pin 2, 5
MIN.
-
16.7
-
-
-
-
TYP.
-
-
-
-
-
-
MAX.
15
-
1
24
29
80
UNITS
V
V
μA
V
V
pF
PJSMS24
PARAMETER
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20μs)
Clamping Voltage (8/20μs)
Off State Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
V
C
C
J
CONDITIONS
-
I
BR
=1mA
V
R
= 24V
I
PP
= 5A
I
PP
= 8A
0 Vdc Bias f=1MHz Between
I/O pins and pin 2, 5
MIN.
-
26.7
-
-
-
-
TYP.
-
-
-
-
-
-
MAX.
24
-
1
40
44
60
UNITS
V
V
μA
V
V
pF
November 07,2011-REV.02
PAGE . 2
PJSMS05 SERIES
RATING
AND CHARACTERISTIC CURVES
% of Rated Power or
I
pp
120
100
80
60
40
20
0
0
C
J
, Junction Capacitance (pF)
140
250
200
150
100
50
0
0
2
4
6
8
10
12
5V
12V
15V
24V
T
A,
Ambient Temperature (°C)
25
50
75
100
125
150
V
R
, Reverse Bias Voltage (V)
Fig.1 Forward Current Derating Curve
600
Fig.2 Typical Junction Capacitance
12000
I
R
,Reverse Current (nA)
I
R
,Reverse Current (nA)
500
400
300
T
J
= 25°C
200
100
0
0.0
5V
12V
10000
8000
6000
4000
2000
0
10
12
14
16
18
20
T
J
= 25°C
2.0
4.0
6.0
8.0
10.0
V
R
, Reverse Voltage (V)
V
R
, Reverse Voltage (V)
Fig.3 Typical Reverse Characteristics
12000
Fig.4 Typical Reverse Characteristics
600
I
R
,Reverse Current (nA)
I
R
,Reverse Current (nA)
10000
8000
6000
4000
2000
0
10
15
20
25
T
J
= 25°C
15V
500
400
300
200
100
0
24V
T
J
= 25°C
30
20
22
24
26
28
30
V
R
, Reverse Voltage (V)
V
R
, Reverse Voltage (V)
Fig.5 Typical Reverse Characteristics
November 07,2011-REV.02
Fig.6 Typical Reverse Characteristics
PAGE . 3
PJSMS05 SERIES
RATING
AND CHARACTERISTIC CURVES
1
1
5V
T
J
= 150°C
I
F
, Forward Current (A)
I
F
, Forward Current (A)
12V
15V
T
J
= 150°C
0.1
0.1
T
J
= 125°C
T
J
= 75°C
T
J
= 25°C
T
J
= 125°C
T
J
= 75°C
T
J
= 25°C
0.01
0.5
0.6
0.7
0.8
0.9
1
0.01
0.5
0.6
0.7
0.8
0.9
1
V
F
, Forward Voltage (V)
V
F
, Forward Voltage (V)
Fig.7 Typical Forward Characteristics
1
Fig.8 Typical Forward Characteristics
50
V
C
, Clamping Voltage (V)
I
F
, Forward Current (A)
24V
T
J
= 150°C
0.1
T
J
= 125°C
T
J
= 75°C
T
J
= 25°C
0.01
0.5
0.6
0.7
0.8
0.9
1
45
40
35
30
25
20
15
10
5
0
5
24V
15V
12V
5V
10
15
20
25
V
F
, Forward Voltage (V)
Ipp, Peak Pulse Current 8/20
μs
(A)
Fig.9 Typical Forward Characteristics
Fig.10 Clamping Voltage vs. Peak Current
November 07,2011-REV.02
PAGE . 4
PJSMS05 SERIES
MOUNTING PAD LAYOUT
SOT-23 6L
0.024
(0.60)
Unit
inch(mm)
0.026
(0.67)
0.037
(0.95)
0.037
(0.95)
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
0.096
(2.43)
November 07,2011-REV.02
PAGE . 5
查看更多>
AD高级技巧: 使用数据库实现元件库的创建和管理
AD数据库元件可以用于批量创建封装或原理图符号相同的元器件,数据源用Excel表格就可以实现。比如0402电阻电容,SOP-8的EEPROM,三极管,MOS管,就特别适合用数据库元件。 首先准备元件的原理图库和PCB封装库比如名字叫test.Schlib,test.Pcblib,里面有3个元件的原理图符号和PCB封装2.新建一个Excel表格,用于映射封装库新建test.xls,如图所示,表头必须有value、Library...
Nubility 综合技术交流
“2016 ROHM科技展”11月24日、25日上海会场即将开启!报名从速!!!
点此报名“2016ROHM科技展”——上海会场“2016ROHM科技展“——上海会场将于11月24、25日盛大开启,届时将向您展示最新产品及各种解决方案。针对上海地区的市场需求,ROHM特别准备了干货满满的技术讲座:11/24活动内容展示:12:30~17:00展示最新产品及各种解决方案演讲:13:30~16:50电源基础讲座从基础开始...
EEWORLD社区 综合技术交流
【转帖】关于运放的一些经典问题
1.一般反相/同相放大电路中都会有一个平衡电阻,这个平衡电阻的作用是什么呢?(1)为芯片内部的晶体管提供一个合适的静态偏置。芯片内部的电路通常都是直接耦合的,它能够自动调节静态工作点,但是,如果某个输入引脚被直接接到了电源或者地,它的自动调节功能就不正常了,因为芯片内部的晶体管无法抬高地线的电压,也无法拉低电源的电压,这就导致芯片不能满足虚短、虚断的条件,电路需要另外分析。(2)消除静态基极电流对输出电压的影响,大小应与两输入端外界直流通路的等效电阻值平衡,这也是其得名的原因...
Ameya360皇华 综合技术交流
开发板技术支持手把手教学EK200-6Q7C
问:只有在myzr下,source后,才可以找见编译工具链,我们的insmod都要求在root下答:不建议使用root用户,普通用户也给了root权限.exportLDFLAGS=,执行这一句问:什么时候执行?答:编译出错的时候问:exportLDFLAGS=执行这一句然后怎么操作?答:继续编译,请把交叉编译工具文件和内核源码包准备好,然后开远程协助。开发板技术支持手把手教学EK200-6Q7C添加2个提问图片...
明远智睿Lan 综合技术交流
贴片磁珠与贴片电感的选用
贴片磁珠与贴片电感的选用片式磁珠的功能主要是消除存在于传输线中的RF噪声。片式磁珠由软磁铁氧体材料组成,构成高体积电阻率的独石结构。涡流损耗同铁氧体材料的电阻率成反比。涡流损耗随信号频率的平方成正比。使用片式磁珠的好处:小和轻。在射频噪声频率范围内具有高阻抗,消除传输线中的电磁干扰。闭合磁路结构,更好地消除信号的串扰。极好的磁屏蔽结构。降低直流电阻,以免对有用信号产生过大的衰减。高频特性和阻抗特性。在高频放大电路中消除寄生振荡。有效的工作在几个MHz到几百MHz的频率范围内。要...
pingshang13 综合技术交流
交流电的疑问
如果把电网电压理想化为标准的正弦波进行考虑它的有效值是220V,峰值时311V但在它毕竟是按照正弦波进行变化的,会有过零时刻如果在过零的时刻,岂不是那一瞬间电压为零了吗?此时没有电压,这不会有什么影响吗?如果是三相电,还好理解,因为三相电压有相位差不会同时为零那么我说的这个问题在单相交流电中怎么办呢?交流电的疑问不管是不是理想的交流电都存在过零点国内工频50Hz若负载没有感性容性器件该点也是电流的过零点这只是电路里的一个瞬态值不知道你是指什么影...
shaorc 综合技术交流