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PJSMS15C_R2_00001

Trans Voltage Suppressor Diode, 350W, 15V V(RWM), Unidirectional, 5 Element, Silicon,

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
R-PDSO-G6
Reach Compliance Code
compliant
ECCN代码
EAR99
最小击穿电压
16.7 V
击穿电压标称值
16.7 V
最大钳位电压
27 V
配置
COMMON ANODE, 5 ELEMENTS
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PDSO-G6
JESD-609代码
e3
最大非重复峰值反向功率耗散
350 W
元件数量
5
端子数量
6
最高工作温度
125 °C
最低工作温度
-50 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
参考标准
IEC-61000-4-2
最大重复峰值反向电压
15 V
表面贴装
YES
技术
ZENER
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
PJSMS05C SERIES
PENTA TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION
This 5 TVS/Zener Array family have been designed to Protect Sensitive
Equipment against ESD and to prevent Latch-Up events in CMOS circuitry
operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated
solution to protect up to 5 data lines where the board space is a premium.
SPECIFICATION FEATURES
350W Power Dissipation (8/20µs Waveform)
Low Leakage Current, Maximum of 5µA at rated voltage
Very Low Clamping Voltage
IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance
Industry Standard Surface Mount Package SOT23-6L
100% Tin Matte Finish (RoHS Compliant)
Lead free in comply with EU RoHS
2011/65/EU
directives.
Green molding compound as per IEC61249 Std. . (Halogen Free)
1
6
5
4
APPLICATIONS
Personal Digital Assistant (PDA)
SIM Card Port Protection (Mobile Phone)
Portable Instrumentation
Mobile Phones and Accessories
Memory Card Port Protection
1
2
3
SOT23-6L
MAXIMUM RATINGS (Per Device)
Rating
Peak Pulse Power (8/20µs Waveform)
ESD Voltage (HBM)
Operating Temperature Range
Storage Temperature Range
Symbol
P
pp
V
ESD
TJ
T
stg
Device
Marking Code
PJSMS05C
MD5
PJSMS12C
MA2
PJSMS15C
MA5
PJSMS24C
MB4
Value
350
>25
-50 to +125
-50 to +150
Units
W
kV
°C
°C
ELECTRICAL CHARACTERISTICS (Per Device)
Tj = 25°C
PJSMS05C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
c
V
c
Cj
Cj
I
BR
= 1mA
V
R
= 5V
I pp = 5A
I pp = 24A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
5 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
5
Units
V
V
6
5
9.5
13
200
110
µA
V
V
pF
pF
November 02,2010-REV.00
Page 1
www.panjit.com
PJSMS05C SERIES
ELECTRICAL CHARACTERISTICS (Per Device)
Tj = 25°C
PJSMS12C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 12V
I pp = 5A
I pp = 15A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
12
Units
V
V
13.3
5
17
21
90
µA
V
V
pF
PJSMS15C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 15V
I pp = 5A
I pp = 12A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
15
Units
V
V
16.7
5
22
27
70
µA
V
V
pF
PJSMS24C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
c
V
c
Cj
I
BR
= 1mA
V
R
= 24V
I pp = 5A
I pp = 8A
0 Vdc Bias f = 1MHz
Between I/O pins and pin 2
Conditions
Min
Typical
Max
24
Units
V
V
26.7
5
35
40
50
µA
V
V
pF
November 02,2010-REV.00
Page 2
www.panjit.com
PJSMS05C SERIES
TYPICAL CHARACTERISTICS
TJ = 25°C unless otherwise noted
Surge Pulse Waveform Definition
N
on-R
epetitive Peak Pulse Power vs Pulse Time
Peak Pulse Power - Ppp (W)
110
100
90
80
70
60
50
40
30
20
10
0
0
Pulse Waveform
1000
50% of Ipp @ 20µs
100
10
1
0.1
0.01
1
10
100
1000
Pulse D
uration, µsec
Percent of Ipp
Rise time 10-90% - 8µs
5
10
15
tim e, µsec
20
25
30
Clamping Voltage vs. Peak current
45
40
35
30
25
20
15
10
5
0
0
5
Off-State Capacitance per Device - 1MHz
200
180
160
140
120
100
80
60
40
20
0
0
Clamping voltage, V
PJSMS24C
PJS 24
MS
PJS 15
MS
PJSMS15C
PJS 12
MS
PJSMS12C
PJS 05
MS
PJSMS05C
Capacitance, pF
PJSMS05C
PJSMS05
PJSMS12C
PJSMS1
2
PJSMS15C
PJSMS1
5
PJSMS24C
PJSMS24
10
15
20
25
30
1
2
3
4
5
Ipp, A (8/20µsec)
Bias, Vdc
November 02,2010-REV.00
Page 3
www.panjit.com
PJSMS05C SERIES
PACKAGE AND PAD LAYOUT DIMENSIONS
SOT23-6L
SOT23-6L
0.119(3.00)
0.110(2.80)
0.075(1.90)
BSC
0.024
(0.60)
0.009(0.22)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.051(1.30)
0.035(0.90)
0.006(0.15)
MAX.
0.057(1.45)
MAX.
0.119(3.00)
0.102(2.60)
0.067(1.70)
0.059(1.50)
0.037
(0.95)
0.037
(0.95)
November 02,2010-REV.00
Page 4
www.panjit.com
PJSMS05C SERIES
Part No_packing code_Version
PJSMS05C_R1_00001
PJSMS05C_R2_00001
For example :
RB500V-40_R2_00001
Part No.
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code
XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
1
st
Code
A
R
B
T
S
L
F
Packing size code
N/A
7"
13"
26mm
52mm
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
Version Code
XXXXX
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
0
1
2
X
Y
U
D
HF
RoHS
0
1
serial number
serial number
November 02,2010-REV.00
PAGE .
5
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