PPJT7839
60V P-Channel Enhancement Mode MOSFET
Voltage
Features
RDS(ON) , VGS@-10V, ID@-500mA<4Ω
RDS(ON) , VGS@-4.5V, ID@-200mA<6Ω
RDS(ON) , VGS@-2.5V, ID@-50mA<13Ω
Advanced Trench Process Technology
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std. (Halogen Free)
-60 V
Current
-250mA
SOT-363
Unit: inch(mm)
Mechanical Data
Case: SOT-363 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0002 ounces, 0.006 grams
Marking: T39
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
A
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
o
UNITS
V
V
mA
mA
mW
mW/
o
C
o
-60
+20
-250
-1000
350
2.8
-55~150
357
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
July 22,2015-REV.00
Page 1
PPJT7839
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DD
=-25V, I
D
=-100mA,
V
GS
=-10V,
R
G
=6Ω
(Note 1,2)
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-10V,I
D
=-500mA
Drain-Source On-State Resistance
V
GS
=-4.5V,I
D
=-200mA
V
GS
=-2.5V,I
D
=-50mA
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=-500mA, V
GS
=0V
-
-
-
-0.95
-250
-1.3
mA
V
V
DS
=-25V, I
D
=-100mA,
V
GS
=-4.5V
V
DS
=-25V, V
GS
=0V,
f=1.0MHZ
-
-
-
-
-
-
-
-
-
-
1.1
0.3
0.2
51
15
2.2
4.8
19
52
32
-
-
-
-
-
-
-
-
-
-
ns
pF
nC
V
DS
=-48V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
-60
-1.0
-
-
-
-
-
-
-1.5
2.4
2.65
4.5
-
-
-
-2.5
4
6
13
-1
+100
uA
nA
Ω
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
4. Guaranteed by design, not subject to production testing
July 22,2015-REV.00
Page 2
PPJT7839
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
July 22,2015-REV.00
Page 3
PPJT7839
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
July 22,2015-REV.00
Page 4
PPJT7839
PART NO PACKING CODE VERSION
PART NO PACKING CODE
Package Type
SOT-363
SOT-363
Packing type
3K pcs / 7” reel
10K pcs / 13” reel
Marking
T39
T39
Version
Halogen free
Halogen free
PJT7839_R1_00001
PJT7839 _R2_00001
MOUNTING PAD LAYOUT
July 22,2015-REV.00
Page 5
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