Raystar Microelectronics Technology Inc.
Features
•
20V, 3A N-Channel
•
2.5 V Rated for Low Voltage Gate Drive
•
SOT−23 Surface Mount for Small Footprint
•
Pb−Free and are RoHS Compliant
Applications
•
•
•
•
Power Switch for Portable Devices
Power Switch for Computing
DC-DC Conversion
Battery Protection
N-Channel Power MOSFET
PM2302
Device
PM2306T3
PM2306T3L
Ordering Information
Package
Shipping
SOT-23
3000pcs/Tape&Reel
SOT-23L
3000pcs/Tape&Reel
MAXIMUM Ratings
(Tj=25º unless otherwise stated)
C,
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ta=25°
C
Steady Current
Drain Current
Vgs=4.5V
Ta=70°
C
Steady State Power
Steady State
Ta=25°C
Dissipation
Pulsed Drain
Tp=10us
Dudy Cycle 2%
Current
Operating Junction and Storage Temperature
Source Current(Body Diode)
Lead Temperature for Soldering Purposes
Thermal Resistance Ratings
Symbol
Vdss
Vgs
Id
Pd
Idm
Tj, Tstg
Is
Tl
Value
20
10
3.0
2.5
1.25
10
-55~150
1.5
260
Unit
V
V
A
A
W
A
°
C
A
°
C
Parameter
Symbol
Max
Junction to Ambient(note 1)
R
QJA
100
Junction to Ambient(note 2)
R
QJA
300
Note 1: Surface-mounted on FR4 board using 1 in square pad size.
(Cu area=1.2 in Square(1 oz) including traces)
Note 2: Surface-mounted on FR4 board using the minimum recommended pad size
Unit
°
C/W
°
C/W
Ver1.1
www.raystar-tek.com
Page 1
Raystar Microelectronics Technology Inc.
Electrical Characteristics(Ta=25
unless otherwise stated)
Parameter
OFF CHARACTERISTICS
Drain to
Voltage
Source
breakdown
Vds(BR)
Vds(BR)
Vgs=0V, Id=250uA
20
Symbol
Test Condition
Min
N-Channel Power MOSFET
PM2302
Typ
Max
Unit
V
Drain to Source breakdown
Voltage
Temperature
Coefficient
Zero Gate Voltage Drain Current
30
mV/°
C
Idss
Vgs=0V,Vds=16V,Tj=25°
C
Vgs=0V,Vds=16V,Tj=85
°C
1
10
100
uA
uA
nA
Gate to Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain to Source On Resistance
Igss
Vds=0V,Vgs=10V
Vgs(TH)
Rds(on)
VGS=Vds,Id=250uA
Vgs=4.5V, Id=1A
Vgs=2.5V, Id=1A
0.55
55
80
0.95
90
110
V
mΩ
mΩ
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
CISS
Coss
Crss
QG(TOT
)
QGS
QGD
Vgs=4.5V,Vds=10V,Id=3.
0A
Vgs=0V,f=1.0MHz,Vds=
10V
300
100
60
4.5
1.2
1
6
nC
pf
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
Vgs=4.5V,
Vds=10V,
Id=3.0A,RG=3Ω
11
8
30
20
20
16
60
40
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Drain Source Diode Current
VSD
Is
Vgs=0V,ISD=1.0A
0.7
1.2
3
V
A
Ver1.1
www.raystar-tek.com
Page 2
Raystar Microelectronics Technology Inc.
Characteristics Curve
N-Channel Power MOSFET
PM2302
Ver1.1
www.raystar-tek.com
Page 3
Raystar Microelectronics Technology Inc.
Package Dimension
SOT23L
N-Channel Power MOSFET
PM2302
SOT23
Ver1.1
www.raystar-tek.com
Page 4
电子工程世界
