YJ Planar Schottky Barrier Diode Die Specification
40V 2A, 40mil, Schottky barrier diode die based on silicon planar process
Part No.: PSB040L040SS-280A
Anode
Main Products Characterstics
• Average forward current: IF(AV) = 2 A
• Maximum operating junction temperature: Tj = 125 °C
• ESD rating: >8KV, per IEC61000-4-2 (Contact Discharge)
• Top metal: Ag
Cathode
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Average forward current
Non−repetitive peak surge current
(tp = 8.3 ms, halfwave, 1 cycle)
Storage temperature range
Maximum operating junction
temperature
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
j
Rating
40 V
2A
50 A
-50 to +125 °C
125 °C
Static Electrical Characteristics (Ta = 25°C)
Parameter
Reverse breakdown voltage
I
R
= 1mA
Symbol
V
BR
Value
Spec
Typical
45 V
52V
Maximum forward voltage drop
I
F
= 2 A
Pulse Test: tp = 300 μs, δ
≤
2%
V
F
0.52V
0.49V
Maximum reverse current
V
R
= V
RRM
Pulse Test: tp = 300 μs, δ
≤
2%
I
R
50uA
25uA
Device Schematics and Outline Drawing
Top Metal
Pad
First Ring
Second Ring
Third Ring
Die Thickness *
Die Size **
Top Metal Pad
Active Area
Schottky Barrier
SiO2
Epi
11 Mils
40 Mils
36.5 Mils
32.9 Mils
Ag
Ag
Active
Area
Top Metal
Top Metal
Back Metal
Note: 1 * : Also can offer device with 8 mils thickness
2 **: Cutting street width is around 1.5 mils
Die Size
Back Metal
Guard Ring
Substrate
Important Notice
Specification apply to die only. Actual performance may degrade when assembled.
Yangjie Microelectronics
does not guarantee device performance after assembly.
All operating parameters must be validated for each customer application by customer's
technical experts.
Data sheet information is subjected to change without notice.
Recommended Storage Environment:
Store in original container, in dessicated nitrogen, with no contamination.
Shelf life for parts stored in above condition is 2 years.
If the storage is done in normal atmosphere shelf life is reduced to 6 months.
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Yangzhou Yangjie Electronics Technology Co.,Ltd.
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Yangzhou Yangjie Electronics Technology Co.,Ltd.
Rev.O
2016/10/08