PTA07N65B
650V N-ch Planar MOSFET
General Features
RoHS Compliant
R
DS(ON),typ.
=1.2 Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
BV
DSS
650V
R
DS(ON),Typ.
1.2Ω
I
D
7.0A
Applications
Adaptor
Charger
SMPS Standby Power
G
D
S
TO-220F
Ordering Information
Part Number
PTA07N65B
Package
TO-220F
Brand
Package Not
to Scale
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
Derating Factor above 25℃
T
L
T
PAK
T
J
& T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
Operating and Storage Temperature Range
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current at V
GS
=10V
Single Pulse Avalanche Energy
Power Dissipation
T
C
=25℃ unless otherwise specified
PTA07N65B
650
Unit
V
±30
7.0
A
28
550
42
0.34
300
260
-55 to 150
mJ
W
W/℃
℃
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
PTA07N65B
2.98
℃/W
100
Unit
©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 1 / 9
Rev.A.2017
PTA07N65B
Electrical Characteristics
OFF Characteristics
Symbol
BV
DSS
Parameter
Drain-to-Source Breakdown Voltage
Min.
650
--
I
DSS
Drain-to-Source Leakage Current
--
--
I
GSS
Gate-to-Source Leakage Current
--
--
-100
--
--
100
+100
nA
V
GS
=-30V, V
DS
=0V
Typ.
--
--
--
1
uA
T
J
=25℃ unless otherwise specified
Max.
Unit
V
Test Conditions
V
GS
=0V, I
D
=250uA
V
DS
=650V, V
GS
=0V
V
DS
=520V, V
GS
=0V,
T
J
=125℃
V
GS
=+30V, V
DS
=0V
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
gfs
Parameter
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Min.
--
2.0
--
Typ.
1.2
--
11
1.40
4.0
--
T
J
=25℃ unless otherwise specified
Max.
Unit
Ω
V
S
Test Conditions
V
GS
=10V, I
D
=3.0A
V
DS
=V
GS
, I
D
=250uA
VDS=30V,ID=3.5A
Dynamic Characteristics
Symbol
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
Parameter
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Essentially independent of operating temperature
Min.
Typ.
1120
10
90
20
5
5
Max.
Unit
Test Conditions
V
GS
=0V,
V
DS
=25V,
f=1.0MH
Z
--
--
--
--
--
--
--
--
--
--
--
--
nC
V
DD
=325V,
I
D
=7A, V
GS
=0 to 10V
pF
Resistive Switching Characteristics
Symbol
td
(ON)
t
rise
td
(OFF)
t
fall
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min.
Typ.
12
12
18
10
Max.
Unit
Test Conditions
--
--
--
--
--
--
ns
V
DD
=325V,
I
D
=7A,
V
GS
=10V
Rg=4.7Ω
--
--
©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 2 / 9
Rev.A.2017
PTA07N65B
Source-Drain Body Diode Characteristics
Symbol
I
SD
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
[2]
Pulsed Source Current
[2]
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
T
J
=25℃ unless otherwise specified
Min
--
--
--
--
--
Typ.
--
--
--
350
1.1
Max.
7.0
Unit
A
Test Conditions
Integral pn-diode
in MOSFET
I
S
=7A, V
GS
=0V
V
GS
=0V
I
F
=7A, di/dt=100A/μs
28
1.5
--
--
V
ns
uC
Note:
[1] T
J
=+25℃ to +150℃
[2] Pulse width≤380µs; duty cycle≤2%.
©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 3 / 9
Rev.A.2017
PTA07N65B
Typical Characteristics
©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 4 / 9
Rev.A.2017
PTA07N65B
Typical Characteristics
(Cont.)
©2017 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 5 / 9
Rev.A.2017
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