PTP03N04N
40V N-Channel MOSFET
General Features
Proprietary New Trench Technology
R
DS(ON),typ.
=2.1 m Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
BV
DSS
40V
R
DS(ON),typ.
2.1mΩ
I
D
[2]
240A
Applications
High efficiency DC/DC Converters
Synchronous Rectification
UPS Inverter
Ordering Information
Part Number
PTP03N04N
Package
TO-220
Brand
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
T
L
T
PAK
T
J
& T
STG
Parameter
Drain-to-Source Voltage
[1]
Gate-to-Source Voltage
Continuous Drain Current
[2]
Continuous Drain Current
[3]
Continuous Drain Current @ Tc=100
Pulsed Drain Current at V
GS
=10V
[2,4]
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
[3]
Power Dissipation
Derating Factor above 25
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
Operating and Storage Temperature Range
[2]
-55 to 175
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
PTP03N04N
0.5
/W
62
Unit
©2016 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
℃
300
260
℃
℃
℃
Absolute Maximum Ratings
T
C
=25
unless otherwise specified
PTP03N04N
40
±20
240
80
180
960
1500
5.0
300
2.0
Unit
V
A
℃
℃
℃
℃
mJ
V/ns
W
W/
℃
Page 1 / 9
Rev. B.2016
PTP03N04N
Electrical Characteristics
Symbol
BV
DSS
Parameter
Drain-to-Source Breakdown Voltage
I
DSS
Drain-to-Source Leakage Current
--
--
--
--
--
100
+100
V
GS
=+20V, V
DS
=0V
nA
V
GS
=-20V, V
DS
=0V
unless otherwise specified
I
GSS
Gate-to-Source Leakage Current
--
-100
Symbol
R
DS(ON)
V
GS(TH)
gfs
Parameter
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Min.
--
2.0
--
Typ.
2.1
--
221
Max.
3.0
4.0
--
Unit
mΩ
V
S
Dynamic Characteristics
Symbol
C
iss
C
rss
C
oss
R
G
Q
g
Q
gs
Q
gd
Parameter
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Gate Series Resistance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Essentially independent of operating temperature
Min.
Typ.
5.02
0.29
0.79
1.8
74
23
26
Max.
Unit
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Essentially independent of operating temperature
nF
Ω
nC
Resistive Switching Characteristics
Symbol
t
d(ON)
t
rise
t
d(OFF)
t
fall
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
Typ.
19
67
49
31
Max.
Unit
--
--
--
--
--
--
nS
V
DD
=20V,
I
D
=80A,
V
GS
= 10V
R
G
=2.5Ω
--
--
©2016 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
℃
ON Characteristics
T
J
=25
Test Conditions
V
GS
=10V, I
D
=80A
[5]
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V,I
D
=80A
[5]
Test Conditions
V
GS
=0V,
V
DS
=25V,
f=1.0MH
Z
f=1.0MH
Z
V
DD
=20V,
I
D
=80A, V
GS
=0 to 10V
Test Conditions
℃
℃
OFF Characteristics
T
J
=25
unless otherwise specified
Min.
40
--
Typ.
--
--
Max.
--
5
Unit
V
Test Conditions
V
GS
=0V, I
D
=250uA
V
DS
=40V, V
GS
=0V
uA
V
DS
=32V, V
GS
=0V,
T
J
=125
Page 2 / 9
Rev. B.2016
PTP03N04N
℃
Source-Drain Body Diode Characteristics
Symbol
I
SD
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current
[2]
Pulsed Source Current
[2]
Diode Forward Voltage
Reverse recovery time
Reverse recovery charge
T
J
=25
unless otherwise specified
Min
--
--
--
--
--
Typ.
--
--
0.90
77
53
Max.
240
960
1.2
--
--
Unit
A
V
ns
nC
Test Conditions
Integral PN-diode in
MOSFET
I
S
=80A, V
GS
=0V
V
GS
=0V ,I
F
=80A,
di
F
/dt=100A/μs
Note:
[1] T
J
=+25 to +175
[2] Silicon limited current only.
[3] Package limited current.
[4] Repetitive rating; pulse width limited by maximum junction temperature.
[5] Pulse width≤380µs; duty cycle≤2%.
©2016 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
.℃
℃
Page 3 / 9
Rev. B.2016
PTP03N04N
Typical Characteristics
Typical Characteristics
(Cont.)
©2016 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 4 / 9
Rev. B.2016
PTP03N04N
Typical Characteristics
(Cont.)
©2016 Perfect Intelligent Power Semiconductor Co., Ltd. All rights reserved. Information and data in this document are owned by PIP
Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.
Page 5 / 9
Rev. B.2016
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