PTS2017
20V/17A N-Channel Advanced Power MOSFET
Features
•
Very Low R
DS(on)
@ 3.3V Logic.
• 3.3V Logic Level Control
• SOP8 Package
• Pb−Free, RoHS Compliant
Applications
•
Low Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others
BVDSS
ID
R
DSON
@V
GS
=4.5V
R
DSON
@V
GS
=3.3V
20
17
5.5
6.5
V
A
mΩ
mΩ
Order Information
Product
PTS2017
Package
SOP8
Marking
PTS2017
Packing
3000PCS/Reel
Min Unit Quantity
6000PCS
Absolute Maximum Ratings
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
Symbol
Parameter
Rating
Unit
Common Ratings (T
C
=25°C Unless Otherwise Noted)
V
GS
Gate-Source Voltage
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
±8
20
150
-55 to 175
17
V
V
°C
°C
A
V
(BR)DSS
T
J
T
STG
I
S
Mounted on Large Heat Sink
I
DM
Pulse Drain Current Tested (Sillicon Limit)
Continuous Drain current@V
GS
=4.5V
Maximum Power Dissipation
(Note2)
T
C
=25°C
T
C
=25°C
T
C
=25°C
68
17
2
65
80
A
A
W
°C/W
°C/W
I
D
P
D
Thermal Resistance Junction−to−Ambient – Steady State (Note 1)
R
JA
Thermal Resistance Junction−to−Ambient –t ≤ 5 s (Note 1)
Note :
1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [2 oz] including traces).
2. Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2%
- 1-
2015-3-26
PTS2017
20V/17A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
VGS=0V ID=250μA
VDS=16V,VGS=0V
VDS=16V,VGS=0V
VGS=±8V,VDS=0V
VDS=VGS,ID=250μA
VGS=4.5V, ID=12A
VGS=3.3V, ID=10A
VGS=2.5V, ID=10A
8
--
--
--
0.45
--
--
--
--
--
--
--
0.70
5.5
6.5
7.5
--
1
100
±10
1.20
7.5
8
9
V
μA
μA
uA
V
mΩ
mΩ
mΩ
I
GSS
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance note A
Drain-Source On-State Resistance note A
Drain-Source On-State Resistance note A
V
GS(TH)
R
DS(ON)
R
DS(ON)
R
DS(ON)
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated) note
B
C
iss
C
oss
C
rss
Input Capacitance
VDS=5V,VGS=0V,
Output Capacitance
f=1MHz
Reverse Transfer Capacitance
VGS=-4.5V
Total Gate Charge
VGS=-2.5V
VDS=5V,ID=10A,
VGS=4.5V
--
--
--
--
1550
140
105
58
25
--
--
--
--
pF
pF
pF
nC
nC
Q
g
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain Charge
--
--
18
12
--
--
nC
nC
Switching Characteristics note
B
t
d(on)
t
r
Turn-on Delay Time
VDD=10V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
ID=3A,
RG=4.7Ω,
VGS=4.5V
--
--
--
--
20
12
25
18
--
--
--
--
nS
nS
nS
nS
t
d(off)
t
f
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
I
SD
V
SD
t
rr
Q
rr
Note:
Source-drain current(Body Diode)
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
Tc=25℃
IS=10A,VGS=0V
Tj=25℃,ISD=1A,
VGS=0V
di/dt=100A/μs
--
--
--
--
0.8
2
5
20
1.2
--
--
A
V
nS
nC
A: Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2%
B:Guranteed by design, not subject to production testing.
- 2-
2015-3-26
PTS2017
20V/17A N-Channel Advanced Power MOSFET
Typical Characteristics
ID, Drain-Source Current (A)
VDS, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
ID, Drain-Source Current (A)
VGS - Gate-to-Source Voltage (V)
Fig2. Transfer Characteristics
RDSON, On Resistance (mΩ)
ID, Drain-Source Current (A)
Fig3. On Resistance
Vs.
Gate -Source Voltage & Drain Currengt
RDSON, On Resistance (mΩ)
(A)
VGS - Gate-to-Source Voltage (V)
Fig4.
Normalized On-Resistance Vs. Temperature
Time (s)
Fig5. Single Pulse .Junction to Ambient
ID - Drain Current (A)
Power (W)
VDS, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
- 3-
2015-3-26
PTS2017
20V/17A N-Channel Advanced Power MOSFET
Typical Characteristics
ISD, Reverse Drain Current (A)
VSD, Source-Drain Voltage (V)
Fig7.
Typical Source-Drain Diode Forward Voltage
VGS, Gate-Source Voltage (V)
Qg -Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
VGS(TH), Gate -Source Voltage (V)
T
j - Junction Temperature (°C)
Fig9.
Threshold Voltage Vs. Temperature
C, Capacitance (pF)
VDS , Drain-Source Voltage (V)
Fig10.
Typical Capacitance Vs.Drain-Source Voltage
Fig11.
Switching Time Test Circuit and waveforms
- 4-
2015-3-26
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