PXAC192908FV
Thermally-Enhanced High Power RF LDMOS FET
240 W, 28 V, 1930 – 1995 MHz
Description
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetri-
cal design intended for use in multi-standard cellular power amplifier
applications in the 1930 to 1995 MHz frequency band. Features
include dual-path design, high gain and thermally-enhanced package
with earless flanges. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXAC192908FV
Package H-37275G-6/2
V
DD
= 28 V, I
DQ
= 600 mA, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
Peak/Average Ratio, Gain (dB)
24
20
16
12
8
4
0
c192908fc_g1
Single-carrier WCDMA Drive-up
Features
•
•
60
Broadband internal input and output matching
Asymmetric Doherty design
- Main: P
1dB
= 120 W Typ
- Peak: P
1dB
= 220 W Typ
Typical Pulsed CW performance, 1990 MHz, 28 V,
combined outputs
- Output power at P
1dB
= 240 W
- Efficiency = 54%
- Gain = 14 dB
Capable of handling 10:1 VSWR
@28 V, 240 W
(CW) output power
Integrated ESD protection
Human Body Model, Class 2 (per ANSI/ESDA/
JEDEC JS-001)
Low thermal resistance
Pb-free and RoHS compliant
•
Efficiency
40
20
Gain
Efficiency (%)
0
-20
-40
-60
•
•
•
•
•
PAR @ 0.01% CCDF
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon Doherty test fixture)
V
DD
= 28 V, I
DQ
= 0.6 A, V
GS(PEAK)
= 0.55 V, P
OUT
= 70 W avg, ƒ
1
= 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
13
45
—
Typ
14
49
–28
Max
—
—
–25
Unit
dB
%
dBc
h
D
ACPR
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02.2, 2015-07-14
PXAC192908FV
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
R
DS(on)
R
DS(on)
V
GS
V
GS
I
GSS
Min
65
—
—
—
—
2.5
0.45
—
Typ
—
—
—
0.11
0.06
2.65
0.55
—
Max
—
1
10
—
—
2.75
0.75
1
Unit
V
µA
µA
W
W
V
V
µA
On-State Resistance (main)
(peak)
Operating Gate Voltage (main)
(peak)
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 0.6 A
V
DS
= 28 V, I
DQ
= 0 A
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (Doherty, T
CASE
= 70°C, 200 W CW, 1960 MHz,
28V, I
DQ (main)
= 600 mA, V
GS (peak)
= 0.55 V)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
qJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.32
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PXAC192908FV V1
PXAC192908FV V1 R250
Order Code
PXAC192908FVV1XWSA1
PXAC192908FVV1R250XTMA1
Package Description
H-37275G-6/2, earless flange
H-37275G-6/2, earless flange
Shipping
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 9
Rev. 02.2, 2015-07-14
PXAC192908FV
Typical Performance
(data taken in a production Doherty test fixture)
Single-carrier WCDMA
Broadband Performance
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 600 mA, P
OUT
= 48.45dBm,
3GPP WCDMA signal, PAR = 10 dB
20
18
55
45
V
DD
= 28 V, I
DQ
= 600 mA, P
OUT
= 48.45dBm,
3GPP WCDMA signal, PAR = 10 dB
-10
-15
Return Loss
-5
-10
-15
-20
-25
-30
c192908fc_g3
Efficiency (%)
Gain (dB)
16
14
Gain
35
25
15
5
2150
-20
-25
-30
-35
-40
1750
12
10
1750
ACP Up
c192908fc_g2
1850
1950
2050
1850
1950
2050
-35
2150
Frequency (MHz)
Frequency (MHz)
Single-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 600 mA,
3GPP WCDMA signal, PAR = 10 dB,
10 MHz carrier spacing, BW = 3.84 MHz
Pulsed CW Performance
V
DD
= 28 V, I
DQ
= 600mA
-20
20
1930 MHz
1960 MHz
1990 MHz
60
ACP Up & Low (dBc)
15
Gain
40
-40
1930 ACPL
1930 ACPU
1960 ACPL
1960 ACPU
1990 ACPL
1990 ACPU
c192908fc_g4
Efficiency
10
20
-50
-60
25
30
35
40
45
50
55
5
c192908fc_g5
28
32
36
40
44
48
52
56
60
0
Average Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 9
Rev. 02.2, 2015-07-14
Efficiency (%)
Gain (dB)
-30
Return Loss (dB)
ACP Up (dBc)
Efficiency
PXAC192908FV
Typical Performance
(cont.)
Pulsed CW Performance
at various V
DD
Small Signal CW Performance
Gain & Input Return Loss
V
DD
= 28 V, I
DQ
= 750 mA
I
DQ
= 600 mA, ƒ = 1990 MHz
60
Efficiency
20
20
IRL
-2
Efficiency (%)
Gain (dB)
15
Gain
40
Gain (dB)
18
-6
16
-10
10
V
DD
= 24 V
V
DD
= 28 V
V
DD
= 32 V
5
c192908fc_g6
20
14
Gain
-14
28
36
44
52
60
0
12
1750
1800
1850
1900
1950
2000
c192908fc_g7
-18
2050
Output Power (dBm)
Frequency (MHz)
Load Pull Performance
Main Side Load Pull Performance
– Pulsed CW signal: 16 µs, 10% duty cycle, V
DD
= 28 V, I
DQ
= 600 mA
P
1dB
Max Output Power
Freq
[MHz]
1930
1960
1990
Zs
[
W]
8.0 – j11.0
11.9 – j11.9
18.0 – j10.4
Zl
[
W
]
2.1 – j4.7
2.1 – j4.7
2.1 – j4.8
Gain
[dB]
18.0
18.2
18.3
P
OUT
[dBm]
51.10
51.10
50.91
P
OUT
[W]
128.8
128.8
123.3
PAE
[%]
50.4
51.0
49.7
Zl
[
W
]
3.6 – j2.7
3.6 – j2.9
3.63 – j2.6
Gain
[dB]
20.2
20.2
20.5
Max PAE
P
OUT
[dBm]
50.12
50.08
49.78
P
OUT
[W]
102.8
101.9
95.1
PAE
[%]
62.5
61.6
61.3
Peak Side Load Pull Performance
– Pulsed CW signal: 16 µs, 10% duty cycle, V
DD
=28 V, I
DQ
= 90 mA
P
1dB
Max Output Power
Freq
[MHz]
1930
1960
1990
Zs
[
W]
1.7 – j5.3
2.0 – j5.8
3.2 – j6.9
Zl
[
W
]
5.3 – j3.8
5.3 – j3.7
6.3 – j2.8
Gain
[dB]
18.0
18.4
18.7
P
OUT
[dBm]
54.24
54.16
54.08
P
OUT
[W]
265.5
260.6
255.9
PAE
[%]
55.6
55.7
54.7
Zl
[
W
]
2.9 – j2.0
2.9 – j2.2
2.9 – j2.2
Gain
[dB]
19.6
20.1
20.3
Max PAE
P
OUT
[dBm]
53.04
52.90
52.88
P
OUT
[W]
201.4
195.0
194.1
PAE
[%]
66.3
66.0
65.0
Data Sheet
4 of 9
Rev. 02.2, 2015-07-14
Input Return Loss (dB)
PXAC192908FV
Reference Circuit , 1930 – 1990 MHz
PXAC192908FV_IN_04_D
R803
C803 C802
R801
C801
S1
C204
C203
R103
R102
R101
C218
C102 C101
C202
C201
C217
C229
C230
PXAC192908FV_OUT_04_D
C205 C206 C207 C208
S3
+
S2
C219
C220 C221
C103
C104
C105
C222
RF
IN
U1
C107 C106
C110
R107
C224
C226
C223
C225
C227
RF
OUT
R104
C109 C108
R105
C209
C210
C211
S4
C212
C228
R106
C213 C214 C215 C216
C231
C232
RO4350_0 .508
(61)
RO4350_0 .508
(194)
p x a c 1 9 2 9 0 8 f v _ C D _ 1 2 - 0 9 - 2 0 1 4
Reference circuit assembly diagram (not to scale)
Data Sheet
5 of 9
Rev. 02.2, 2015-07-14
stm32/stm8
