JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZT2222A
SOT-223
TRANSISTOR (NPN)
FEATURES
Epitaxial planar die construction
Complementary PNP Type available (PZT2907A)
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
1. BASE
2. COLLECTOR
3. EMITTER
Value
75
40
6
600
1
150
-55~ +150
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
h
FE(6)
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
ob
t
d
t
r
t
S
t
f
Unit
V
V
V
mA
W
℃
℃
Min
75
40
6
10
10
10
35
50
75
100
50
40
1
0.3
2.0
1.2
300
8
10
25
225
60
V
V
V
V
MHz
pF
ns
ns
ns
ns
300
Max
Unit
V
V
V
nA
nA
nA
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Test conditions
I
C
= 10μ A,I
E
=0
I
C
= 10mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=60V,V
BE(off)
=3V
V
EB
= 3V , I
C
=0
V
CE
=10V, I
C
= 0.1mA
V
CE
=10V, I
C
= 1mA
V
CE
=10V, I
C
= 10mA
V
CE
=10V, I
C
= 150mA
V
CE
=1V, I
C
= 150mA
V
CE
=10V, I
C
= 500mA
I
C
=500mA, I
B
= 50mA
I
C
=150mA, I
B
= 15mA
I
C
=500mA, I
B
= 50mA
I
C
=150mA, I
B
=15mA
V
CE
=20V,I
C
= 20mA, f=100MHz
V
CB
=10V, I
E
= 0,f=1MHz
V
CC
=30V, I
C
=150mA
V
BE(off)
=0.5V,I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=-I
B2
= 15mA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
A,Jun,2011
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