JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
SOT-223
PZTA56
FEATURES
TRANSISTOR (PNP)
1. BASE
2. COLLECTOR
3. EMITTER
Low Voltage and High Current
General Purpose Amplifier Applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-80
-80
-4
-500
1
125
150
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
f
T
Test conditions
I
C
=-0.1mA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-0.1mA,I
C
=0
V
CB
=-80V,I
E
=0
V
CE
=-60V,I
B
=0
V
EB
=-3V, I
C
=0
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-100mA
I
C
=-100mA,I
B
=-10mA
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V,I
C
=-100mA, f=100MHz
50
100
100
-0.25
-1.2
V
V
MHz
Min
-80
-80
-4
-100
-100
-100
Typ
Max
Unit
V
V
V
nA
nA
nA
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
A,Nov,2010
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