RB521C30
RB521C30
Schottky Barrier Diode
http://www.willsemi.com
Features
100mA Average rectified forward current
Low forward voltage
Low leakage current
Small package SOD-923
SOD-923
Pin1
Pin2
Circuit
Applications
Low Current rectification
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Peak forward surge current (8.3ms single sine pluse)
Junction temperature
Operating temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
T
J
Topr
Tstg
Marking
Value
30
30
100
0.5
150
-40 ~ 125
-40 ~ 150
Unit
V
V
mA
A
O
C
C
C
O
O
Electronics characteristics
(T
A
=25
o
C)
Parameter
Reverse Voltage
Forward Voltage
Reverse current
Junction capacitance
Thermal Resistance
Order Informations
Device
RB521C30-2/TR
Package
SOD-923
Marking
1*
(1)
Shipping
10000/Reel&Tape
Symbol
V
R
V
F
I
R
C
J
R
θ(JA)
Condition
I
R
=100uA
I
F
=10mA
I
F
=100mA
V
R
=10V
V
R
=30V
V
R
=5V, F=1MHz
Junction to Ambient
21
650
Min.
30
0.35
0.47
6
15
V
V
uA
uA
pF
K/W
Typ.
Max.
Unit
Note 1：*= Month code(A~Z);1= Device code;
Will Semiconductor Ltd.
1
Jan, 2019 - Rev. 1.3
RB521C30
Typical characteristics
(Ta=25
o
C, unless otherwise noted)
1000
Reverse Current(uA)
0.1
Forward Current(A)
125 C
85 C
o
o
150 C
o
100
10
1
0.1
85 C
o
125 C
o
65 C
25 C
0C
o
o
o
0.01
65 C
o
0C
o
25 C
o
1E-3
-50 C
o
1E-4
-50 C
o
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.01
5
10
15
20
25
30
Forward Voltage(V)
Reverse Voltage(V)
Forward voltage vs. Forward current
125
100
Reverse current vs. Reverse voltage
100
Forward Current(mA)
f=1MHz
75
50
25
0
C
j
(pF)
10
0
25
50
75
100
o
125
150
1
0
5
10
15
20
25
Ambient temperature( C)
Reverse Voltage(V)
Forward current derating curve
6
Maximum Peak Surge
Forward Current-I
FSM
(A)
I
FSM
Junction capacitance vs. Reverse voltage
T
4
2
0
0
10
20
30
Single Pluse Width-T(ms)
IFSM-T Characteristics
Will Semiconductor Ltd.
2
Jan, 2019 - Rev. 1.3
RB521C30
PACKAGE OUTLINE DIMENSIONS
SOD-923
E
E1
A
Ⅰ
Ⅱ
D
b
TOP VIEW
θ
SIDE VIEW
c
Ⅰ
Ⅱ
θ
SIDE VIEW
Symbol
A
D
E
E1
b
c
θ
Dimensions in Millimeters
Min.
0.35
0.55
0.90
0.70
0.15
-
Typ.
0.40
0.60
1.00
0.80
-
-
7°Ref
Max.
0.45
0.65
1.10
0.90
0.30
0.20
Will Semiconductor Ltd.
3
Jan, 2019 - Rev. 1.3
RB521C30
TAPE AND REEL INFORMATION
Reel Dimensions
Reel Dimensions
P1
Tape Dimensions
RD
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q3
Q2
Q4
Q1
Q3
Q2
Q4
User Direction of Feed
RD
W
P1
Pin1
Reel Dimension
Overall width of the carrier tape
Pitch between successive cavity centers
Pin1 Quadrant
4
7inch
13inch
12mm
4mm
Q2
16mm
8mm
Q3
Q4
1
8mm
2mm
Q1
Will Semiconductor Ltd.
Jan, 2019 - Rev. 1.3
W
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