Schottky barrier Diode
RB521G-30
FEATURES
Small surface mounting type
High reliability
SOD-723
+
MARKING:
F
-
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
DC reverse voltage
Mean rectifying current
Non-repetitive
Peak forward surge current
@ t=8.3ms
Power dissipation
Thermal Resistance Junction to Ambient
Symbol
V
R
I
O
I
FSM
P
D
R
θJA
T
j
T
stg
Limit
30
200
1
100
1000
125
-55~+150
Unit
V
mA
A
mW
℃/W
Junction temperature
Storage temperature
℃
℃
Electrical Ratings @Ta=25℃
Parameter
Symbol
V
F1
V
F2
I
R
Min
Typ
Ma x
0.35
0.5
10
Unit
V
V
μA
Conditions
I
F
=10mA
I
F
=200mA
V
R
=10V
Forward voltage
Reverse current
Document ID
Issued Date
2015/09/08
Revised Date
2016/05/16
Revision
B
Page.
3
Page 1
AS-3070114
Schottky barrier Diode
RB521G-30
Typical Characteristics
Forward
1000
Characteristics
1000
Reverse
Characteristics
100
(mA)
100
T
a
=100 C
o
I
F
=1
00
C
o
10
FORWARD CURRENT
REVERSE CURRENT I
R
T
a
(uA)
10
1
T=
a
2
5
o
C
T
a
=25 C
1
o
0.1
0.01
0
50
100
150
200
250
300
350
400
450
500
550
600
0.1
0
5
10
15
20
25
30
FORWARD VOLTAGE
V
F
(mV)
REVERSE VOLTAGE
V
R
(V)
Capacitance Characteristics
100
120
Power Derating Curve
T
a
=25
℃
f=1MHz
(mW)
P
D
80
30
100
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
10
POWER DISSIPATION
0
5
10
15
20
60
40
3
20
1
0
0
25
50
75
100
125
AMBIENT TEMPERATURE
REVERSE VOLTAGE
V
R
(V)
T
a
(
℃
)
Document ID
Issued Date
2015/09/08
Revised Date
2016/05/16
Revision
B
Page.
3
Page 2
AS-3070114
Schottky barrier Diode
RB521G-30
SOD-723 Package Outline Dimensions
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A
A1
b
c
D
E
E1
E2
L
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0LQ
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0.525
0.650
0.515
0.580
0.250
0.350
0.080
0.150
0.550
0.650
0.900
1.100
1.300
1.500
0.200 REF
0.010
0.070
7° REF
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0LQ
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0.021
0.026
0.020
0.023
0.010
0.014
0.003
0.006
0.022
0.026
0.035
0.043
0.051
0.059
0.008 REF
0.001
0.003
7° REF
SOD-723 Suggested Pad Layout
Document ID
Issued Date
2015/09/08
Revised Date
2016/05/16
Revision
B
Page.
3
Page 3
AS-3070114
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