RB521S30
RB521S30
Schottky Barrier Diodes
Features
Small surface mounting type
Low reverse current and low
forward voltage
High reliability
These are Pb Free Devices
External dimensions
(Unit : mm)
Land size figure
(Unit : mm)
1
C
2
1
2
ORDER
INFORMATION
PIN-PACKAGE
SOD523
ORDERING
NUMBER
RB521S30-2/TR
PACKAGE
MARKING
C
PACKAGE
OPTION
3000/Tape&Reel
MODEL
RB521S30
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25
Parameter
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
Symbol
V
R
I
O
I
FSM
T
j
T
stg
Limits
30
200
1
125
-40~125
Unit
V
mA
A
Electrical Ratings @TA=25
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
Typ.
Max.
0.5
30
Unit
V
A
Conditions
I
F
=200mA
V
R
=10V
http://www.willsemi.com
Page 1
2/3/2008 Ver 2.0
RB521S30
Typical Characteristics
1
100m
10m
T
a
C
REVERSE CURRENT : I
R
(A)
RB521S30
10m
Ta 125 C
1m
75 C
100
10
1
100n
10n
25 C
25 C
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
100
50
Ta=25˚C
f=1MHz
FORWARD CURRENT : I
F
(A)
20
10
5
1
2
C
7
5
2
5
5
C
2
5
C
1m
100
10
1
0
0.1
0.2
2
1
0
0.3
0.4
0.5
0.6
0
10
20
30
2
4
6
8
10
12
14
REVERSE VOLTAGE : V
R
(V)
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V
R
(V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between
terminals characteristics
100
Io CURRENT (%)
80
60
40
20
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta ( C)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
http://www.willsemi.com
Page 2
2/3/2008 Ver 2.0
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