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RS1MW

1 A, 1000 V, SILICON, SIGNAL DIODE

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
R-PDSO-C2
针数
2
Reach Compliance Code
_compli
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
1000 V
最大反向恢复时间
0.5 µs
表面贴装
YES
端子面层
Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
RS1AW~RS1MW
SURFACE MOUNT FAST RECOVERY RECTIFIER
VOLTAGE
50 to 1000 Volts
CURRENT
1.0 Ampere
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Fast Recovery times for high efficiency
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICAL DATA
Case: SMA-W molded plastic
Terminals: Solder plated, solderable per MIL-STD-750D,Method 1036.3
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.002 ounce, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e R e c t i f i e d C ur r e nt a t T
L
= 9 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 2 5
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
M a xi m um J unc t i o n c a p a c i t a nc e ( N o t e 2 )
Ty p i c a l J u n c t i o n R e s i s t a n c e ( N o t e 3 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a t i n g
S YM B O L
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
t
rr
C
J
R
θ
J A
R
θ
J L
T
J
, T
S TG
R S 1 A W R S 1 B W R S 1 D W R S 1 G W R S 1 J W R S 1 K W R S 1 M W U N IT S
50
35
50
100
70
100
200
140
200
400
280
400
1 .0
30
1 .3
5 .0
150
150
12
100
32
- 5 5 TO + 1 5 0
O
600
420
600
800
560
800
1000
800
1000
V
V
V
A
A
V
uA
250
500
ns
pF
C / W
O
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
2. Measured at 1 MHz and applied V
r
= 4.0 volts.
3. 8.0 mm
2
( .013mm thick ) land areas.
STAD-JUN.19.2006
PAGE . 1
RS1AW~RS1MW
RATING AND CHARACTERISTIC CURVES
PEAK FORWARD SURGE CURRENT
, AMPERES
30
8.3ms Single Half Sine-Wave
JEDEC Method
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
3.0
2.5
2.0
1.5
1.0
0.5
0
0
50
100
150
SINGLE-PHASE, HALF-WAVE,60Hz RESISTIVE
OR INDUCTIVE LOAD P .C .B MOUNTED
ON 0.315x0.315"(8.0 x 8.0mm)
COPPER PAD AREAS
25
20
15
10
5
0
1
2
6
10
20
40
60
100
LEAD TEMPERATURE,
O
C
NUMBER OF CYCLES AT 60Hz
Fig.1 FORWARD CURRENT DERATING CURVE
Fig.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
INSTANTANEOUS FORWARD CURRENT,
AMPERES
10
100
Tj= 25 C
f= 1.0MHz
Vsig = 50mVp -p
O
1.0
CAPACITANCE, pF
T = 2 5
O
C
J
0.1
10
.0 1
1
0.1
.00 1
0.2
1
10
100
0 .4
0.6
0 .8
1 .0
1.2
1 .4
1 .6
REVERSE VOLTAGE, VOLTS
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
Fig.4 TYPICAL JUNCTION CAPACITANCE
LEGAL STATEMENT
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-JUN.19.2006
PAGE . 2
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