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RS821S, RS822S
RS821, RS822, RS824
14MHz, Rail-to-Rail I/O
CMOS Operational Amplifier
FEATURES
•
•
•
•
•
•
•
HIGH GAIN BANDWIDTH:14MHz
RAIL-TO-RAIL INPUT AND OUTPUT
0.6mV Typical Vos
INPUT VOLTAGE RANGE: -0.1V to +5.6V
with Vs = 5.5V
SUPPLY RANGE: +2.5V to +5.5V
SHUTDOWN: RS821S/RS822S
SPECIFIED UP TO +125°
C
Micro
SIZE PACKAGES: SOT23-5, SOT23-6
The devices are ideal for sensor interfaces, active
filters and portable applications. The RS821S,
RS822S include a shutdown mode. Under logic
control, the amplifiers can be switched from normal
operation to a standby current that is less than
1uA.The RS82X families of operational amplifiers
are specified at the full temperature range of −40°
C
to +125° under single or dual power supplies of
C
2.5V to 5.5V.
DESCRIPTION
The RS82X families of products offer low voltage
operation and rail-to-rail input and output, as well as
excellent speed/power consumption ratio, providing
an excellent bandwidth (14MHz) and slew rate of
10V/us. The op-amps are unity gain stable and
feature an ultra-low input bias current.
APPLICATIONS
•
•
•
•
SENSORS
PHOTODIODE AMPLIFICATION
ACTIVE FILTERS
TEST EQUIPMENT
DRIVING A/D CONVERTERS
•
PIN CONFIGURATIONS
RS821
OUT
V-
1
2
RS821S
5
V+
OUT
V-
1
6
5
V+
EN
RS822S
RS821
NC
-IN
1
2
3
4
8
NC
V+
OUT
NC
OUT A
-IN A
1
2
10
V+
2
3
7
-
+
+IN
3
4
-IN
+IN
4
-IN
+IN
V-
+
+
-
+
-
6
5
+IN A
V-
En A
3
4
5
A
B
9
OUT B
-IN B
+IN B
En B
SOT23-5
SOT23-6
SOIC-8(SOP8),MSOP-8
+
RS821B
+ IN
V-
- IN
RS821S
5
V+
NC
-IN
1
2
1
8
EN
V+
OUT
OUT A
-IN A
+IN A
1
2
3
2
3
7
6
4
SOT23-5
OUT
+IN
V-
+
-
3
4
+
A
B
+
5
SOIC-8(SOP8)
NC
V-
4
SOIC-8(SOP8),MSOP-8
Note: NC indicates no internal connection
REV B.3
1
-
RS822
-
8
7
6
MSOP-10
RS824
8
7
6
5
V+
OUTB
OUT A
1
14
OUT D
-IN D
+IN D
V-
-
+
-IN A
+IN A
V+
2
3
4
A
- +
D
+ -
13
12
11
-IN B
+IN B
+IN B
-IN B
5
6
7
- +
B
+ -
C
10
9
8
+IN C
-IN C
OUT C
OUT B
SOIC-14(SOP14),TSSOP-14
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RS821S, RS822S
RS821, RS822, RS824
ABSOLUTE MAXIMUM RATINGS
(1)
Supply Voltage, V+ to V-...............................................7.0V
Input Terminals, Voltage
(2)
…………... – 0.5 to (V+) + 0.5V
Current
(2)
…………………....…..... ±
10mA
Storage Temperature ……….…………… −65° to +150°
C
C
Operating Temperature ……….………… −40° to +125°
C
C
Junction Temperature................................................150°
C
Package Thermal Resistance @ T
A
= +25°
C
SOT23-5, SOT23-6………………….………………200°
C/W
MSOP-10, SOIC-8 …………………….…………... 150°
C/W
SOIC-14, TSSOP-14……….….….….…..…………100°
C/W
Lead Temperature (Soldering, 10s) ……………........260°
C
ESD Susceptibility
HBM …......................................................................5000V
MM ……………………….........………………...……….400V
(1)
Stresses above these ratings may cause permanent damage. Exposure
to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those
specified is not implied.
(2)
Input terminals are diode-clamped to the power-supply rails. Input
signals that can swing more than 0.5V beyond the supply rails should
be current-limited to 10mA or less.
ESD SENSITIVITY CAUTION
ESD damage can range from subtle performance
degradation to complete device failure. Precision
integrated circuits may be more susceptible to
damage because very small parametric changes
could cause the device not to meet its published
specifications.
PACKAGE/ORDERING INFORMATION
2
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RS821S, RS822S
RS821, RS822, RS824
ELECTRICAL CHARACTERISTICS
(At T
A
= +25C, Vs=5V, R
L
= 10kΩ connected to V
S
/2, and V
OUT
= V
S
/2, unless otherwise noted.)
RS821S, RS822S,
RS821, RS822, RS824
PARAMETER
POWER SUPPLY
Vs
IQ
PSRR
Operating Voltage Range
Quiescent Current/Amplifier
Power-Supply Rejection Ratio
CONDITIONS
T
J
MIN
25C
Vs=2.5V to 5.5V,
Vcm=(V-)+0.5V
25C
25C
-40C to 125C
25C
-40C to 125C
25C
25C
Vs= 5.5V
Vs= 5.5V, Vcm
=-0.1V to 4V
CMRR
Common-Mode Rejection Ratio
Vs= 5.5V, Vcm
=-0.1V to 5.6V
25C
25C
-40C to 125C
25C
-40C to 125C
25C
-40C to 125C
25C
-40C to 125C
25C
25C
25C
25C
25C
V
IN
·
Gain≥V
S
f = 1KHz
f = 10KHz
25C
25C
25C
25C
25C
Shut Down
Amplifier Is Active
25C
25C
V-
(V-) +2
-0.1
75
67
61
58
91
78
89
75
2.5
75
65
TYP
MAX
5.5
UNIT
V
mA
dB
1.9
88
2.5
INPUT
Vos
Vos TC
IB
Ios
Vcm
Input Offset Voltage
Input Offset Voltage Average
Drift
Input Bias Current
Input Offset Current
Common-Mode Voltage Range
0.6
1.6
1
1
10
10
5.6
88
75
dB
2.5
mV
uV/C
pA
pA
V
OUTPUT
AOL
Open-Loop Voltage Gain
R
L
=2KΩ, Vo=
0.15V to 4.85V
R
L
=10KΩ, Vo=
0.05V to 4.95V
R
L
=2KΩ
R
L
=10KΩ
100
98
20
7
110
10
14
58
0.2
0.3
8.5
5.5
<1
3
20
(V-) +0.8
V+
dB
Output Swing From Rail
Iout
SR
GBP
PM
ts
Output Short-Circuit Current
Slew Rate
Gain-Bandwidth Product
Phase Margin
Setting Time,0.1%
Overload Recovery Time
mV
mA
V/us
MHz
°
us
us
nV/√Hz
nV/√Hz
FREQUENCY RESPONSE
NOISE
e
n
Input Voltage Noise Density
ENABLE/SHUTDOWN(RS821S,RS822S)
I
Q(OFF)
t
OFF
t
ON
V
L
V
H
Supply Current in Shutdown
uA
us
us
V
V
3
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RS821S, RS822S
RS821, RS822, RS824
TYPICAL CHARACTERISTICS
At T
A
= +25C, Vs=5V, R
L
= 10kΩ connected to V
S
/2, V
OUT
= V
S
/2, unless otherwise noted.
OPEN−LOOP GAIN AND PHASE vs FREQUENCY
120
Gain
160
140
Phase
120
COMMON−MODE REJECTION RATIO vs
FREQUENCY
100
Open-Loop Gain(dB)
80
60
40
20
0
-20
10
1K
100K
10M
Phase Margin (°)
120
100
80
60
100
40
20
0
CMRR(dB)
80
60
40
20
1
10
100
1K
10K
Frequency(Hz)
INPUT VOLTAGE NOISE
SPECTRAL DENSITY vs FREQUENCY
100
120
100
Frequency(KHz)
V
s
=5V
POWER−SUPPLY REJECTION RATIO vs
FREQUENCY
|
Voltage Noise (nV/√Hz)
PSRR(dB)
10
100
1K
10K
100K
80
60
40
10
1
20
1
10
100
1K
10K
Frequency(Hz)
Frequency(KHz)
V
s
=5V
QUIESCENT CURRENT vs TEMPERATURE
2.3
2.2
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
-40 -20
0
20 40 60 80 100 120 140
Temperature(℃) V
s
=2.7V
2.3
2.2
2.1
2
1.9
1.8
1.7
1.6
1.5
QUIESCENT CURRENT vs TEMPERATURE
Quiescent Current(mA)
Quiescent Current(mA)
-40 -20
0
20 40 60 80 100 120 140
Temperature(℃) V
s
=5V
4
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RS821S, RS822S
RS821, RS822, RS824
TYPICAL CHARACTERISTICS
At T
A
= +25C, Vs=5V, R
L
= 10kΩ connected to V
S
/2, V
OUT
= V
S
/2, unless otherwise noted.
150
SINK CURRENT vs TEMPERATURE
130
SOURCE CURRENT vs TEMPERATURE
Source Current(mA)
-40 -20
0
20 40 60 80 100 120 140
Temperature(℃)
Sink Current(mA)
140
120
110
130
120
110
100
100
90
80
-40 -20
0
20 40 60 80 100 120 140
Temperature(℃)
INPUT BIAS CURRENT vs TEMPERATURE
10K
SMALL−SIGNAL STEP RESPONSE
C
L
=100PF
Input Bias Current(pA)
1K
100
10
1
0.1
-40 -20
0
20
40
60
80 100 120 140
50mV/div
200ns/div
Temperature(℃)
POSITIVE OVERLOAD RECOVERY
LARGE−SIGNAL STEP RESPONSE
C
L
=100PF
0V
V
IN
200mV/div
1V/div
V
S
=±2.5V
G=-100
0V
400ns/div
500ns/DIV
5
1V/div
V
OUT
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