首页 > 器件类别 > 模拟混合信号IC > 精密运放

RS8554XP

增益带宽积(GBP):4.5MHz 放大器组数:4 运放类型:CMOS 各通道功耗:- 压摆率(SR):2.7 V/us 电源电压:2.7V ~ 5.5V 零漂移,1uV Vos,4.5MHz,4通道运放

器件类别:模拟混合信号IC    精密运放   

厂商名称:润石(RUNIC)

厂商官网:http://www.run-ic.com/

下载文档
器件参数
参数名称
属性值
增益带宽积(GBP)
4.5MHz
放大器组数
4
输出类型
Rail-to-Rail
运放类型
CMOS
压摆率(SR)
2.7 V/us
工作温度
-40°C ~ 125°C
电源电压
2.7V ~ 5.5V
文档预览
此文档权利由RUNIC(润石)享有,您也可访问RUNIC(润石)官方½站获取;立创商城 WWW.SZLCSC.COM,中½领先的现货元器件交易平台。
RS8551, RS8552
RS8553, RS8554
Zero-Drift, Rail-to-Rail I/O CMOS Operational
Amplifiers
Features
Low Offset Voltage: 1uV
Input Offset Drift: 0.005μV/°
C
High Gain Bandwidth Product: 4.5MHz
Rail-to-Rail Input and Output
High Gain, CMRR, PSRR:130dB
High Slew Rate: 2.7V/μs
Low Noise: 0.75uVp-p (0.01~10Hz)
Low Power Consumption: 640μA /op amp
Overload Recovery Time:1us
Low Supply Voltage: +2.7 V to +5.5 V
No External Capacitors Required
Extended Temperature: -40° to +125°
C
C
Description
The RS8551,RS8552,RS8554,RS8553(dual version
&shutdown)series of CMOS operational amplifiers
use auto-zero techniques to simultaneously provide
very low offset voltage (5μV max) and near-zero drift
over time and temperature. This family of amplifiers
has ultralow noise, offset and power.
This miniature, high-precision operational amplifiers
offset high input impedance and rail-to-rail input and
rail-to-rail output swing. With high gain-bandwidth
product of 4.5MHz and slew rate of 2.7V/μs.
Single or dual supplies as low as +2.7V(±1.35V) and
up to +5.5V (±2.75V) may be used.
The RS8551/RS8552/RS8554/RS8553(dual version
with shutdown) are specified for the extended
industrial and automotive temperature range (-40°
C
to 125° The RS8551 single amplifier is available
C).
in 5-lead SOT23, 8-lead MSOP8 and 8-lead SOIC
packages, The RS8552 dual amplifier is available in
8-lead SOIC and 8-lead TSSOP narrow surface
mount packages, The RS8553(dual version with
shutdown) comes in
Micro-SIZE
MSOP-10. The
RS8554 quad is available in 14-lead SOIC and 14-
lead narrow TSSOP packages.
Applications
Temperature Sensors
Medical/Industrial Instrumentation
Pressure Sensors
Battery-Powered Instrumentation
Active Filtering
Weight Scale Sensor
Strain Gage Amplifiers
Power Converter/Inverter
REV B.3
1
www.run-ic.com
此文档权利由RUNIC(润石)享有,您也可访问RUNIC(润石)官方½站获取;立创商城 WWW.SZLCSC.COM,中½领先的现货元器件交易平台。
RS8551, RS8552
RS8553, RS8554
PIN CONFIGURATIONS
RS8551
OUT
V-
+IN
RS8551
5
NC
V+
-IN
RS8552
8
NC
V+
OUT
NC
OUT A
-IN A
1
2
1
2
3
4
8
7
+
V+
OUTB
-IN B
+IN B
1
2
3
+
-
4
+IN
-IN
+
V-
SOT23-5
SOIC-8,MSOP-8
RS8553
OUT A
OUT A
-IN A
1
2
10
V+
-
+
9
+IN A
V-
En A
3
4
5
A
B
OUT B
-IN B
+IN B
En B
-
+
8
7
6
MSOP-10
Note: NC indicates no internal connection
-
7
A
B
+
6
5
+IN A
V-
3
4
6
5
SOIC-8,MSOP-8
RS8554
1
2
3
14
A
- +
D
+ -
13
12
OUT D
-IN D
+IN D
-IN A
+IN A
V+
+IN B
4
5
6
11
10
V-
+IN C
-IN C
-IN B
OUT B
- +
B
+ -
C
9
7
SOIC-14,TSSOP-14
8
OUT C
2
www.run-ic.com
此文档权利由RUNIC(润石)享有,您也可访问RUNIC(润石)官方½站获取;立创商城 WWW.SZLCSC.COM,中½领先的现货元器件交易平台。
RS8551, RS8552
RS8553, RS8554
ABSOLUTE MAXIMUM RATINGS
(1)
Supply Voltage, V+ to V-...............................................7.0V
(2)
Input Terminals, Voltage …………... – 0.5 to (V+) + 0.5V
(2)
Current …………………....…..... ±
10mA
Storage Temperature ……….…………… −65° to +150°
C
C
Operating Temperature ……….………… −40° to +125°
C
C
Junction Temperature................................................150°
C
Package Thermal Resistance @ T
A
= +25°
C
SOT23-5, SOT23-6………………….………………200°
C/W
MSOP-10, SOIC-8 …………………….…………... 150°
C/W
SOIC-14, TSSOP-14………….……….……………100°
C/W
Lead Temperature (Soldering, 10s) ……………........260°
C
ESD Susceptibility
HBM …......................................................................5000V
MM ……………………….........………………...……….400V
(1)
Stresses above these ratings may cause permanent damage. Exposure
to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those
specified is not implied.
(2)
Input terminals are diode-clamped to the power-supply rails. Input
signals that can swing more than 0.5V beyond the supply rails should
be current-limited to 10mA or less.
ESD SENSITIVITY CAUTION
ESD damage can range from subtle performance
degradation to complete device failure. Precision
integrated circuits may be more susceptible to
damage because very small parametric changes
could cause the device not to meet its published
specifications.
PACKAGE/ORDERING INFORMATION
PRODUCT
RS8551
RS8551
RS8551
RS8552
RS8552
RS8553
RS8554
RS8554
ORDERING
NUMBER
RS8551XF
RS8551XK
RS8551XM
RS8552XK
RS8552XM
RS8553XN
RS8554XP
RS8554XQ
TEMPRANGE
-40
0
C~125
0
C
-40
0
C~125
0
C
-40
0
C~125
0
C
-40
0
C~125
0
C
-40
0
C~125
0
C
-40
0
C~125
0
C
-40
0
C~125
0
C
-40
0
C~125
0
C
PACKAGE
SOT23-5
SOIC-8
MSOP-8
SOIC-8
MSOP-8
MSOP-10
SOIC-14
TSSOP-14
PACKAGE
MARKING
8551
RS8551
RS8551
RS8552
RS8552
RS8553
RS8554
RS8554
TRANSPORT
MEDIA,QUANTITY
Reel,3000
Reel,2500
Reel,3000
Reel,2500
Reel,3000
Reel,3000
Reel,2500
Reel,3000
3
www.run-ic.com
此文档权利由RUNIC(润石)享有,您也可访问RUNIC(润石)官方½站获取;立创商城 WWW.SZLCSC.COM,中½领先的现货元器件交易平台。
RS8551, RS8552
RS8553, RS8554
ELECTRICAL CHARACTERISTICS
Boldface
limits apply over the specified temperature range,
T
A
= –40
°
to +125
°
C
C.
(At T
A
= +25
0
C
, V
s
=5V, R
L
= 10kΩ connected to V
S
/2, and V
OUT
= V
S
/2, unless otherwise noted.)
RS8551, RS8552,
RS8553, RS8554
MIN
TYP
MAX
1
0.005
VS = +2.7V to +5.5V, VCM = 0
110
130
0.1
I
B
I
os
e
n
p-p
e
n
p-p
e
n
i
n
V
CM
(V–) – 0.1V < V
CM
< (V+)+ 0.1V
f=0.01Hz to 10Hz
f=0.01Hz to 1Hz
f=1KHz
f=10Hz
(V-)-0.1
110
130
1
5
A
OL
SR
GBW
RL=10KΩ, VO=0.3V to 4.7V, -40°C~125°C
G=+1
110
130
2.7
4.5
1
V
OH
V
OL
I
SC
2.7
I
Q
640
2
150
0
0.75(V+)
50
1
5
+0.8
V+
RL=100 KΩ to GND
RL=10 KΩ to GND
Output Voltage Low
Short-Circuit Current
POWER SUOOLY
Operating Voltage Range
Quiescent Current/ Amplifier
SHUTDOWN
t
OFF
t
ON
V
L
(shutdown)
V
H
(amplifier is active)
Input Bias Current of Enable Pin
I
QSD
μs
us
V
V
pA
uA
5.5
870
V
uA
RL=100 KΩ to V+
RL=10 KΩ to V+
4.99
4.95
4.998
4.98
1
10
50
10
30
VCM = Vs/2
50
10
0.75
0.22
35
1.5
(V+)+0.1
5
0.05
PARAMETER
OFFSET VOLTAGE
Input Offset Voltage
VS Temperature
VS Power Supply
Channel Separation, dc
INPUT BIAS CURRENT
Input Bias Current
Input Offset Current
NOISE PERFORMANCE
Input Voltage Noise
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
INPUT CAPACITANCE
Differential
Common-Mode
OPEN-LOOP GAIN
Open-Loop Voltage Gain
DYNAMIC PERFORMANCE
Slew Rate
Gain-Bandwidth Product
Overload Recovery Time
OUTPUT CHARACTERISTICS
Output Voltage High
V
os
dV
os
/dT
PSRR
CONDITION
UNIT
V
CM
= V
s
/2
μV
μV/ C
dB
μV/V
pA
pA
μVpp
μVpp
nV/√Hz
fA/√Hz
V
dB
pF
pF
dB
V/μs
MHz
us
V
V
mV
mV
mA
0
Common-Mode Rejection Ratio CMRR
4
www.run-ic.com
此文档权利由RUNIC(润石)享有,您也可访问RUNIC(润石)官方½站获取;立创商城 WWW.SZLCSC.COM,中½领先的现货元器件交易平台。
RS8551, RS8552
RS8553, RS8554
TYPICAL CHARACTERISTICS
At T
A
= +25C, Vs=5V, R
L
= 10kΩconnected to V
S
/2, V
OUT
= V
S
/2, unless otherwise noted.
OFFSET VOLTAGE PRODUCTION
DISTRIBUTION
Number Of Amplifiers
-4
-3
-2
-1
0
1
2
3
6
5
4
3
2
1
0
OFFSET VOLTAGE DRIFT PRODUCTION
DISTRIBUTION
Population
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6
Offset Voltage (uV)
OPEN−LOOP GAIN AND PHASE vs FREQUENCY
140
120
Gain
Phase
130
10K
Input Offset Drift (nV/℃)
INPUT BIAS CURRENT vs TEMPERATURE
90
70
50
30
10
10
1K
100K
-10
10M
Phase Margin (°)
100
80
60
40
20
0
-20
Input Bias Current(pA)
110
Open-Loop Gain(dB)
1K
100
10
-40 -20
0
20
40
60
80 100 120 140
Frequency(Hz)
Temperature(℃)
COMMON−MODE REJECTION RATIO vs
FREQUENCY
140
120
100
POWER−SUPPLY REJECTION RATIO vs
FREQUENCY
140
120
100
PSRR(dB)
80
60
40
20
0
100
1K
10K
100K
1M
10M
CMRR(dB)
80
60
40
20
0
100
1K
10K
100K
1M
10M
Frequency(Hz)
Frequency(Hz)
5
www.run-ic.com
查看更多>
0-5V转换-20mA V/I电路分析
0-5V转换-20mAV/I电路分析这个有点猛,DING!~幸亏有PDF,不然眼睛就要累坏了。不过内容挺好。建议您发图片时候设的大一些好。不错啊顶一下!不错!1、V2=V2\',须以负反馈电路为前提,顶楼的图错画成了正反馈,该式就不会成立了。2、Io≒I3,要求三极管的放大倍数足够大,而2N2905的hFE最小只有35(Ic=0.1mA时),所以这是个较大的误差源,应心里有数。关于推导的前提,要小心两点:恩不错,顶顶一下很好太猛了!!!!好东西...
bkkman 模拟电子
关于输入输出电阻的问题
输入输出电阻是各种放大电路和集成运放的重要参数,问一下各位这两个参数是不是动态的啊,即受信号频率,大小的影响,可是有的集成运放却标有输入电阻的明确值;最后这两个参数是否可以用万用表直接测量,这一问题困扰我很长时间了,请各位尽力指点一下,讨论也很好啊!关于输入输出电阻的问题阻抗的大小当然跟频率会有点关系,但在一般使用范围内无数量级的差异。比如说输入阻抗>10MΩ,你是不会在乎究竟是10500kΩ还是10800kΩ的,电路上大致能估算就行了。阻抗参数是附加在电路上的特性,不是个独立元件,所以...
sabertan 模拟电子
电阻选择多少瓦合适?
功率是否=(U*U)/R=(220*220)/100K=48400/100K=0.484瓦我用的是2010封装的贴片电阻,是0.75瓦,会烧坏吗?而且是一直通电的状态下,望大神指点!不剩感激!!电阻选择多少瓦合适?你最好查一查这种封装的电阻是否能够承受300V以上的峰值电压。要降低功耗并保护光耦,考虑与电阻串联一支二极管,二极管耐压当然应该大于工频电压峰值并留有余量。 2010是3/4W,按一般选择功率电阻的方法,取1.5-2倍,基本上最低值,电阻是烧不了。不...
oulinzeng 模拟电子
图中的器件名称的是什么
如图所示我知道左边是一个RJ45+2个USB接口的结构右边是上下为DB9+VGA接头的结构但是如果要搜索它们,关键词是什么,或者叫做什么名字?图中的器件名称的是什么 RJ45带双usb接口FRJ45025RJ45与USB2.0组合接头90插件1000Base-T(LED)FDB2401组合连接器90插件D-SUB9公黑色+15母黑色 关键词:双层比如:网口USB双层。串口VGA双层某宝上搜RJ...
shaorc 模拟电子
SIC1819 空心转速计 / 速度计驱动器
SIC1819空心转速计/速度计驱动器SIC1819是用于汽车转速表(动—磁式转速计/速度计)的驱动器。芯片内含有基准电压源、Norton放大器、具有正弦和余弦输出特性的函数发生器和NPN晶体管驱动器。输出20mA电流时对称电压±4.5V,305°范围内非线性度小于2%。电参数完全达到国外LM1819和CS289的要求,并可替换使用。特点?20mA输出?12V工作电压?函数发生...
fighting 模拟电子
基于积累型MOS变容管的射频压控振荡器设计
来源:今日电子作者:电子科技大学微电子与固体电子学院易新敏王向展杨谟华引言随着移动通信技术的发展,射频(RF)电路的研究引起了广泛的重视。采用标准CMOS工艺实现压控振荡器(VCO),是实现RFCMOS集成收发机的关键。过去的VCO电路大多采用反向偏压的变容二极管作为压控器件,然而在用实际工艺实现电路时,会发现变容二极管的品质因数通常都很小,这将影响到电路的性能。于是,人们便尝试采用其它可以用CMOS工艺实现的器件来代替一般的变容二极管,MOS变容管便应运而生了。MOS变...
fighting 模拟电子