JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
S8050
FEATURES
TRANSISTOR (NPN)
Complimentary to S8550
Collector current: I
C
=0.5A
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
25
5
0.5
0.625
150
-55-150
Unit
V
V
V
A
W
℃
℃
1.EMITTER
2.BASE
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
V
CE
= 1V,
I
C
= 500mA
50
0.6
1.2
150
V
V
MHz
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
= 6V, I
C
=20mA
f =
30MHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
Test
conditions
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
B
=0
Min
40
25
5
0.1
0.1
0.1
85
400
Typ
Max
Unit
V
V
V
μA
μA
μA
I
C
= 100
μA
,
I
C
= 0.1mA,
I
E
= 100
μ
A,
V
CB
= 40 V ,
V
CE
= 20 V ,
V
EB
= 5V,
V
CE
= 1V,
I
C
=0
I
C
= 50mA
f
T
h
FE(1)
B
85-160
C
CLASSIFICATION OF
Rank
Range
D
160-300
D3
300-400
120-200
B,Aug,2012
Typical Characterisitics
Static Characteristic
100
1000
S8050
h
FE
——
I
C
COMMON EMITTER
V
CE
=1V
T
a
=100
℃
480uA
(mA)
80
COLLECTOR CURRENT
60
DC CURRENT GAIN
I
C
360uA
300uA
240uA
40
h
FE
420uA
COMMON
EMITTER
T
a
=25
℃
T
a
=25
℃
100
180uA
120uA
I
B
=60uA
20
0
0
4
8
12
16
20
10
1
3
10
30
100
500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
500
V
CEsat
——
I
C
2000
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
300
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
1000
T
a
=25
℃
T
a
=100
℃
100
T
a
=100
℃
30
T
a
=25
℃
β=10
10
1
3
10
30
100
500
100
1
3
10
30
100
β=10
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
100
I
C
COMMON EMITTER
V
CE
=1V
—— V
BE
(MHz)
1000
f
T
—— I
C
COMMON EMITTER
V
CE
=6V
T
a
=25
℃
(mA)
30
I
C
COLLECTOR CURRENT
T
a
=100
℃
3
TRANSITION FREQUENCY
10
f
T
1
300
100
T
a
=25
℃
0.3
0.1
0.0
10
0.2
0.4
0.6
0.8
1.0
2
10
30
100
BASE-EMMITER VOLTAGE V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
C
ib
T
a
=25
℃
750
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
20
625
30
(pF)
500
C
CAPACITANCE
10
C
ob
375
250
3
125
1
0.1
0.3
1
3
10
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Aug,2012
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