首页 > 器件类别 > 分立半导体 > 三极管

s8550

晶体管类型:PNP 集电极电流Ic:500mA 集射极击穿电压Vce:25V 额定功率:225mW

器件类别:分立半导体    三极管   

厂商名称:台湾安邦(AnBon)

厂商官网:http://www.formosagr.com/

下载文档
器件参数
参数名称
属性值
晶体管类型
PNP
集电极电流Ic
500mA
集射极击穿电压Vce
25V
额定功率
225mW
文档预览
S8550
General Purpose Transistors
PNP Silicon
Features
High current capacity in compact package I
C
= -0.5A.
Epitaxial planar type
Pb-free package is available
Suffix "-H" indicates Halogen-free part, ex.S8550 -H.
Package outline
SOT-23
0.045 (1.15)
0.034 (0.85)
0.020 (0.50)
(C)
O
0.120 (3.04)
0.110 (2.80)
.084(2.10)
.068(1.70)
(B)
(A)
0.063 (1.60)
0.047 (1.20)
0.027 (0.67)
0.013 (0.32)
0.108 (2.75)
0.083 (2.10)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, SOT-23
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.044 (1.11)
0.035 (0.89)
0.007 (0.18)
0.012 (0.30)
0.003 (0.09)
Mounting Position : Any
Weight : Approximated 0.008 gram
Dimensions in inches and (millimeters)
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuoun
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-40
-25
-5.0
-500
UNIT
V
V
V
mAdc
Thermal characteristics
PARAMETER
T = 25
O
C
Total device dissipation FR-5 board
A
O
(1)
Derate above 25 C
Thermal resistance
Total device dissipation alumina
substrate(2)
Thermal resistance
Storage temperature range
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Junction to ambient
T
A
= 25 C
Derate above 25
O
C
Junction to ambient
R
θJA
T
J
T
STG
-55
-55
O
Symbol
P
D
MIN.
TYP.
MAX. UNIT
225
1.8
mW
mW/ C
O
R
θJA
P
D
556
300
2.4
417
+150
+150
C/W
mW
mW/
O
C
O
C/W
o
Operating junction temperature range
C
C
o
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
Revision
D
Page.
4
Page 1
AS-3140056
S8550
General Purpose Transistors
PNP Silicon
Electrical characteristics
(AT T =25 C unless otherwise noted)
o
A
Off characteristics
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
On characteristics
PARAMETER
DC current gain
Collector-emitter saturation voltage
CONDITIONS
I
c
= -100mA, V
CE
= -1.0V
I
c
= -800mA, I
B
= -80mA
Symbol
h
FE*Note
V
CE(sat)
MIN.
100
TYP.
MAX. UNIT
600
-0.5
V
I
c
= -100uA
I
c
= -1.0mA
I
E
= -100uA
V
CB
= -35V
V
EB
= -4.0V
CONDITIONS
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
MIN.
-40
-25
-5.0
-150
-150
TYP.
MAX. UNIT
V
V
V
nA
nA
Note
*
h
FE
L
120~200
H
200~350
J
300~400
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
Revision
D
Page.
4
Page 2
AS-3140056
Rating and characteristic curves
-90
-80
I
C
——
V
CE
-400uA
-360uA
-320uA
-280uA
-240uA
-200uA
COMMON
EMITTER
T
a
=25
h
FE
500
h
FE
T
a
=100
——
I
C
(mA)
-70
-60
-50
-40
I
C
T
a
=25
100
COLLECTOR CURRENT
-160uA
-30
-20
-10
-0
-0
-2
-4
-6
-8
-10
-12
-120uA
-80uA
I
B
=-40uA
DC CURRENT GAIN
COMMON EMITTER
V
CE
=-1V
10
-1
-10
-100
-500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1200
V
BEsat
——
I
C
-500
V
CEsat
——
I
C
-800
2 5
T
a
=
100
T
a
=
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-100
00
=1
T
a
5
=2
T
a
β=10
-400
-1
-10
-100
-500
-10
-1
-10
-100
β=10
-500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-500
I
C
——
V
BE
(MHz)
f
T
400
——
I
C
(mA)
I
C
TRANSITION FREQUENCY
f
T
T =1
00
a
100
-100
COLLECTOR CURRENT
-10
T =2
5
a
COMMON EMITTER
V
CE
=-1V
-1
-0
-300
-600
-900
-1200
COMMON EMITTER
V
CE
=-6V
T
a
=25
10
-1
-10
-100
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
50
C
ob
/C
ib
——
V
CB
/V
EB
400
P
C
——
T
a
C
ib
(pF)
C
ob
COLLECTOR POWER DISSIPATION
P
C
(mW)
300
10
CAPACITANCE
C
200
100
f=1MHz
I
E
=0/I
C
=0
T
a
=25
1
-0.1
0
-1
-10
-20
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
)
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
Revision
D
Page.
4
Page 3
AS-3140056
S8550
General Purpose Transistors
PNP Silicon
Pinning information
Pin
PinB
PinC
PinE
Base
Collector
Emitter
B
E
Simplified outline
C
Symbol
C
B
E
Marking
Type number
S8550
Marking code
2YT
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
Reel packing
PACKAGE
REEL SIZE
REEL
(pcs)
3,000
COMPONENT
SPACING
(m/m)
4.0
BOX
(pcs)
30,000
INNER
BOX
(m/m)
183*123*183
REEL
DIA,
(m/m)
178
CARTON
SIZE
(m/m)
382*257*387
CARTON
(pcs)
240,000
APPROX.
GROSS WEIGHT
(kg)
11.6
SOT-23
7"
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
Revision
D
Page.
4
Page 4
AS-3140056
查看更多>