S8550
PNP General Purpose Transistors
TO-92
1. E MIT T E R
2. B A SE
3. COL L E CTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-E m itter Voltage
Collector-B as e Voltage
E m itter-B as e VOltage
Collector Current
Total Device Dis s ipation T
A
=2 5 C
J unction Tem perature
S torage, Tem perature
Symbol
V CE O
V CB O
VE B O
IC
PD
Tj
Ts tg
Value
-2 5
-4 0
-5 . 0
-5 0 0
0.625
150
-5 5 to +1 5 0
Unit
Vdc
Vdc
Vdc
m Adc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-E m itter B reakdown Voltage (I C = -0 . 1 mAdc, I B =0 )
Collector-B as e B reakdown Voltage (I C = -1 0 0 µAdc, I E =0 )
E m itter-B as e B reakdown Voltage (I E = -1 0 0 µAdc, I C =0 )
Collector Cutoff Current (V CE = -2 0 Vdc, I B =0 )
Collector Cutoff Current (V CB = -4 0 Vdc, I E =0 )
E m itter Cutoff Current (V E B = -3 . 0 V d c, I C =0 )
Symbol
V (B R )CE O
V (B R )CB O
V (B R )E B O
I CE 0
I CB O
IE B O
Min
-2 5
-4 0
-5 . 0
-
-
-
Max
-
-
-
-0 . 2
-0 . 1
-0 . 1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
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S8550
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
TYP
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC=- 50 mAdc, VCE=-1.0 Vdc)
DC Current Gain
(IC= -500 mAdc, VCE= 1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC= -500 mAdc, IB= -50 mAdc)
Base-Emitter Saturation Voltage
(IC= -500 mAdc, IB= -50 mAdc)
Current-Gain-Bandwidth Product
(IC= -20 mAdc, VCE=-6.0 Vdc, f=30MHz)
hFE
(1)
hFE
(2)
VCE(sat)
VBE(sat)
fT
85
50
-
-
150
-
-
-
-
300
-
-0.6
-1.2
-
-
Vdc
Vdc
-
-
MHz
Classification of hFE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
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2
S8550
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3
S8550
TO-92 Outline Dimensions
E
unit:mm
C
J
K
G
Dim
A
B
C
D
E
G
H
J
K
L
H
TO-92
Min
Max
3.70
3.30
1.40
1.10
0.55
0.38
0.51
0.36
4.70
4.40
-
3.43
4.70
4.30
1.270TYP
2.44
2.64
14.10
14.50
B
L
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D
A
4
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