JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9011
TRANSISTOR（ NPN
）
TO—92
FEATURE
Power dissipation
P
CM
: 0.31 W（Tamb=25℃）
Collector current
I
CM:
0.03
A
Collector-base voltage
V
(BR)CBO
: 30 V
Operating and storage junction temperature range
Tj, T
stg
:
-55℃ to +150℃
1.EMITTER
2. COLLECTOR
3. BASE
1 2 3
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
unless
Test
otherwise
specified）
TYP
MAX
UNIT
V
V
V
0.1
0.1
0.1
μA
μA
μA
conditions
MIN
30
20
4
Ic= 100μA
，
I
E
=0
I
C
= 0.1 mA , I
B
=0
I
E
= 100μA， I
C
=0
V
CB
=16V , I
E
=0
V
CB
=16V , I
E
=0
V
EB
= 3.5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
= 10 mA, I
B
= 1mA
I
C
= 10 mA, I
B
= 1mA
V
CE
=5V,I
C
=1mA,
f=30MHz
28
270
0.3
1
V
V
Transition frequency
f
T
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
D
28-45
E
39-60
F
54-80
G
72-108
H
97-146
I
132-198
J
180-270
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b
φ
e
e1
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Dimensions In Millimeters
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
1.270TYP
2.440
14.100
0.000
2.640
14.500
1.600
0.380
4.700
Max
3.700
1.400
0.550
0.510
4.700
Min
L
Dimensions In Inches
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.050TYP
0.096
0.555
0.000
0.104
0.571
0.063
0.015
0.130
0.043
0.015
0.014
0.173
0.135
0.169
C
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