Plastic-Encapsulate Transistors
FEATURES
Complimentary to S9012
S9013
(NPN)
MARKING
:
J3
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
40
25
5
0.5
0.3
150
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Collector Power Dissipation
Junction Temperature
Storage Temperature
P
C
T
J
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
Test
conditions
Min
40
25
5
Typ
Max
Unit
V
V
V
I
C
= 100
μ
A
,
I
E
=0
I
C
= 0.1mA
,
I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=40V, I
E
=0
V
CE
=20V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
=1V, I
C
= 50mA
V
CE
=1V, I
C
=500mA
I
C
=500mA, I
B
= 50mA
I
C
=500mA, I
B
= 50mA
V
CE
=6V,
I
C
= 20mA
0.1
0.1
0.1
120
40
0.6
1.2
150
400
u
A
u
A
u
A
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
V
V
MHz
f
T
f=
30MHz
CLASSIFICATION OF
h
FE
Rank
Range
L
120-200
H
200-350
J
300-400
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Transistors
S9013
Typical
Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2