Plastic-Encapsulate Transistors
FEATURES
Complimentary to S9014
S9015
(PNP)
MARKING
:
M6
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-50
-45
-5
-0.1
0.2
150
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Collector Power Dissipation
Junction Temperature
Storage Temperature
P
C
T
J
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Test
conditions
Min
-50
-45
-5
Typ
Max
Unit
V
V
V
IC= -100μA, IE=0
IC = -0.1mA, IB=0
IE=-100μA, IC=0
VCB=-50 V, IE=0
VEB= -5V, IC=0
VCE=-5V, IC= -1mA
IC=-100mA, IB= -10mA
IC=-100mA, IB=-10mA
VCE=-5V,
f=30MHz
IC= -10mA
-0.1
-0.1
200
1000
-0.3
-1
μA
μA
V
V
Transition frequency
fT
150
MHz
CLASSIFICATION OF
h
FE
L
200-450
H
450-1000
Rank
Range
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Transistors
S9015
Typical
Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
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