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SB1040CT

肖特基二极管

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
TO-220AB
包装说明
ROHS COMPLIANT, PLASTIC PACKAGE-3
针数
3
Reach Compliance Code
_compli
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW POWER LOSS
应用
EFFICIENCY
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.55 V
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
150 A
元件数量
2
相数
1
端子数量
3
最高工作温度
125 °C
最低工作温度
-50 °C
最大输出电流
5 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
40 V
表面贴装
NO
技术
SCHOTTKY
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
SB1020CT~SB1060CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.50(12.7)MIN.
0.624(15.87)
0.548(13.93)
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
20 to 60 Volts
CURRENT
10 Amperes
• Low power loss, high efficiency.
• In compliance with EU RoHS 2002/95/EC directives
0.115(2.92)
0.080(2.03)
0.025(0.65)MAX.
MECHANCAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
0.100(2.54)
0.100(2.54)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Ma xi m um R e c ur re nt P e a k R e ve r s e Vo lta g e
Ma xi m um R MS Vo lta g e
Ma xi m um D C B lo c k i ng Vo lta g e
Ma xi m um A ve r a g e F o rwa r d C urre nt
.3 7 5 " (9 .5 m m) le a d le ng th a t T
C
= 7 5
O
C
P e a k F o r wa rd S ur g e C ur re nt : 8 .3 ms s i ng le
ha lf s i ne - wa ve s up e r i mp o s e d o n ra te d lo a d
( J E D E C me tho d )
Ma xi m um F o r wa rd Vo lta g e a t 5 A p e r le g
Ma xi m um D C Re ve r s e C urr e nt a t
Ra te d D C B lo c k i ng Vo lta g e
Typ i c a l The rm a l R e s i s ta nce
Op e r a ti ng J unc ti o n a nd S to ra g e Te m p e ra tur e
Ra ng e
T
A
= 2 5
O
C
T
A
= 1 0 0
O
C
S YM B OL
S B 1 0 2 0 C T S B 1 0 3 0 C T S B 1 0 4 0 C T S B 1 0 4 5 C T S B 1 0 5 0 C T S B 1 0 6 0 C T
V
RRM
V
RM S
V
DC
I
F ( AV )
I
F S M
V
F
I
R
R
J
C
T
J
,T
S TG
0 .5 5
0 .2
50
3 .0
- 5 0 to + 1 2 5
O
0.177(4.5)
MAX.
UNITS
V
V
V
A
20
14
20
30
21
30
40
28
40
10
45
3 1 .5
45
50
35
50
60
42
60
150
A
0 .7 5
V
mA
C / W
O
C
NOTE:
Both Bonding and Chip structure are available.
September 2,2010-REV.04
PAGE . 1
SB1020CT~SB1060CT
RATING AND CHARACTERISTIC CURVES
150
AVERAGE FORWARD CURRENT,
AMPERES
25
20-30V
40-60V
PEAK FORWARD SURGE CURRENT,
AMPERES
120
110
90
70
50
30
20
10
1
2
5
10
20
50
100
8.3ms Single
Half Sine-Wave
JEDEC Method
20
15
10
5
0
0
50
100
150
CASE TEMPERATURE,
O
C
NO. OF CYCLE AT 60Hz
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
10
INSTANTANEOUS REVERSE CURRENT, mA
INSTANTANEOUS FORWARD CURRENT
AMPERES
T
J
=100
O
C
10
Per Diode
O
T
J
=25 C
1.0
T
J
=75
O
C
0.1
1
T
J
=25
O
C
0.01
20-45V
50-60V
0.1
0.2
0.4
0.6
0.8
1.0
0.001
0
20
40
60
80
100
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
Fig.3- TYPICAL REVERSE CHARACTERISTIC
INSTANTANEOUS FORWARD VOLTAGE
,VOLTS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
September 2,2010-REV.04
PAGE . 2
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