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SB3060LCT

肖特基二极管

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
TO-220AB
包装说明
R-PSFM-T3
针数
3
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
LOW POWER LOSS
应用
EFFICIENCY
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
250 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
15 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
60 V
表面贴装
NO
技术
SCHOTTKY
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
SB3060LCT
DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
60 Volts
CURRENT
30 Ampers
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0655 ounces, 1.859 grams
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig.1)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy at T
J
=25
o
C,L=60mH per diode
Typ i c a l The r ma l Re s i s ta nc e
Operating junction and storage temperature range
per diode
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
R
JC
T
J
,T
STG
VALUE
60
30
15
250
450
2 .5
-55 to + 150
O
UNIT
V
A
A
mJ
C /W
o
C
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=15A
I
F
=30A
I
F
=15A
I
F
=30A
V
R
=60V
T
A
=25
o
C
T
A
=125
o
C
T
A
=25
o
C
T
A
=125
o
C
MIN.
60
-
-
-
-
-
-
TYP.
-
-
-
0.48
0.64
-
-
MAX.
-
0.60
0.75
0.56
0.70
480
150
UNIT
V
V
V
A
mA
Instantaneous forward voltage per
diode
(1)
V
F
Reverse current per diode
(1)
Note.1 Pulse test : tp=380s,
<2%
I
R
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.1.2-AUG.6.2009
PAGE . 1
SB3060LCT
RATINGS AND CHARACTERISTICS CURVES (T
A
=25
o
C unless otherwise noted)
Average Forward Current (A)
35
Junction Capacitance (pF)
Resistive or Inductive Load
30
25
20
15
10
5
0
0
25
50
75
100
125
150
10000
T
J
=25
o
C
f=1.0MHz
Vsig=50mVp-p
1000
100
10
0.1
1
10
100
Case Temperature (
o
C)
Reverse Voltage (V)
Figure 1. Forward Current
Derating Curve
Figure 2. Typical Junction
Capacitance
1000
1000
Instantaneous Forward
Current (A)
Instantaneous Reverse
Current (mA)
T
A
=100
o
C
100
100
T
A
=100 C
10
1
0.1
0.01
10 20
T
A
=25
o
C
o
T
A
=125
o
C
10
T
A
=75
o
C
1
o
T
A
=25 C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
30 40 50 60 70 80 90 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Typical Instantaneous
Forward Characteristics Per Diode
Figure 4. Typical Reverse
Characteristics Per Diode
REV.1.2-AUG.6.2009
PAGE . 2
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