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SB3060LDC

肖特基二极管

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
D2PAK
包装说明
R-PSSO-G2
针数
4
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
LOW POWER LOSS
应用
EFFICIENCY
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-263AB
JESD-30 代码
R-PSSO-G2
最大非重复峰值正向电流
250 A
元件数量
2
相数
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-55 °C
最大输出电流
15 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
60 V
表面贴装
YES
技术
SCHOTTKY
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
SB3060LDC
LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
0.357(9.1)
0.335(8.5)
60 Volts
CURRENT
30 Amperes
0.189(4.8)
0.137(4.4)
0.055(1.4)
0.047(1.2)
0.418(10.6)
0.378(9.60)
0.409(10.4)
0.387(9.80)
MECHANICAL DATA
Case : TO-263, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0514 ounces, 1.46 grams
0.110(2.8)
0.236(6.0)
0.197(5.0)
0.026(0.7)
0.011(0.3)
0.055(1.4)
0.039(1.0)
0.108(2.75)
0.092(2.35)
0.35(0.9)MAX.
0.108(2.75)
0.092(2.35)
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Typical thermal resistance
Operating junction temperature range
Storage temperature range
per device
per diode
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
R
ΘJA
R
ΘJC
T
J
T
STG
VALUE
60
30
15
250
50
4 .0
-55 to + 125
-55 to + 150
O
UNIT
V
A
A
C /W
o
C
C
o
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
=5A
I
F
=7.5A
I
F
=15A
I
F
=5A
I
F
=7.5A
I
F
=15A
V
R
=48V
Reverse current per diode
I
R
V
R
=60V
T
A
=25
o
C
T
A
=100
o
C
T
J
=25 C
o
MIN.
60
-
-
-
-
-
-
-
-
-
TYP.
-
0.40
0.43
0.51
0.30
0.35
0.47
80
200
30
MAX.
-
-
-
0.60
-
-
0.52
-
480
100
UNIT
V
V
Instantaneous forward voltage per
diode
V
F
T
J
=125
o
C
V
μA
μA
mA
April 6,2011-REV.00
PAGE . 1
SB3060LDC
C
J
, Junction Capacitance (pF)
18
10000
Per Diode
1000
I
F
, Forward Current (A)
Per Diode
15
12
9
6
3
0
0
25
50
75
100
125
150
100
10
1
0.1
1
10
100
T
C
, Case Temperature (°C)
V
R
, Reverse Bias Voltage (V)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
I
R
,Reverse Current (mA)
1000
Per Diode
100
10
1
T
J
= 100°C
0.1
T
J
= 25°C
0.01
20
40
60
80
100
T
J
= 75°C
100
I
F
, Forward Current (A)
T
J
= 125°C
Per Diode
T
J
= 125°C
10
T
J
= 100°C
T
J
= 25°C
1
T
J
= 75°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Percent of Rated Peak Reverse Voltage (%)
V
F
, Forward Voltage (V)
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
April 6,2011-REV.00
PAGE . 2
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