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SB4040LDCT/R13

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 40V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
D2PAK
包装说明
ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3
针数
4
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
LOW POWER LOSS
应用
EFFICIENCY
外壳连接
CATHODE
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-263AB
JESD-30 代码
R-PSSO-G2
最大非重复峰值正向电流
250 A
元件数量
2
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
20 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
40 V
表面贴装
YES
技术
SCHOTTKY
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
SB4040LDC
LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
0.357(9.1)
0.335(8.5)
40 Volts
CURRENT
40 Amperes
0.409(10.4)
0.387(9.80)
0.189(4.8)
0.137(4.4)
0.055(1.4)
0.047(1.2)
0.418(10.6)
0.378(9.60)
MECHANICAL DATA
• Case : TO-263/D
2
PAK, Plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
• Weight: 0.0514 ounces, 1.46 grams
0.110(2.8)
0.236(6.0)
0.197(5.0)
0.026(0.7)
0.011(0.3)
0.055(1.4)
0.039(1.0)
0.108(2.75)
0.092(2.35)
0.35(0.9)MAX.
0.108(2.75)
0.092(2.35)
MAXIMUM RATINGS ( T
A
=25
o
C unless otherwise noted )
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Typical thermal resistance ( Note )
Operating junction and storage temperature range
per device
per diode
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
R
ΘJC
T
J
, T
STG
VALUE
40
40
20
250
3.3
-55 to + 150
O
UNIT
V
A
A
C /W
o
C
ELECTRICAL CHARACTERISTICS ( T
A
=25
o
C unless otherwise noted )
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
=1mA
I
F
= 5A
I
F
=10A
I
F
=20A
Instantaneous forward voltage per diode
V
F
I
F
= 5A
I
F
=10A
I
F
=20A
V
R
=32V
Reverse current per diode
I
R
V
R
=40V
T
J
=25
o
C
T
J
=125
o
C
-
-
270
140
400
560
T
J
=125
o
C
-
-
-
-
0.25
0.31
0.39
126
-
-
0.42
-
V
MIN.
40
-
-
-
TYP.
-
0.37
0.41
0.47
MAX.
-
-
-
0.50
UNIT
V
T
J
=25
o
C
V
T
J
=25
o
C
μA
μA
mA
Note : Semi-infinite heatsink.
March 09,2011-REV.00
PAGE . 1
SB4040LDC
C
J
, Junction Capacitance (pF)
25
10000
Per Diode
I
F
, Forward Current (A)
Per Diode
20
15
10
5
0
0
25
50
75
100
125
150
1000
100
1
10
100
T
C
, Case Temperature (°C)
V
R
, Reverse Bias Voltage (V)
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
I
R
,Reverse Current (mA)
1000
T
J
= 125°C
100
10
1
T
J
= 75°C
0.1
Per Diode
0.01
20
40
60
80
100
T
J
= 25°C
T
J
= 100°C
I
F
, Forward Current (A)
100
T
J
= 125°C
10
T
J
= 100°C
T
J
= 25°C
1
T
J
= 75°C
Per Diode
0.1
0
0.2
0.4
0.6
Percent of Rated Peak Reverse Voltage (%)
V
F
, Forward Voltage (V)
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
March 09,2011-REV.00
PAGE . 2
SB4040LDC
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 0.8K per 13" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
March 09,2011-REV.00
PAGE . 3
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