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SB820_04

8 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AC

器件类别:半导体    分立半导体   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

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DATA SHEET
SB820~SB8100
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
20 to 100 Volts
CURRENT
8 Ampere
TO-220AC
Unit : inch (mm)
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available :
99% Sn above can meet Rohs environment
substance directive request
.50(12.7)MIN
.177(4.5)MAX
.419(10.66)
.387(9.85)
.139(3.55)
MIN
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.038(0.96)
.019(0.50)
.548(13.93)
.025(0.65)MAX
MECHANICALDATA
Case: TO-220AC full molded plastic package
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24grams.
.1(2.54)
.1(2.54)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA R A M E TE R
M a xi um R e curre nt P e a k R e ve rse V o l a g e
m
t
M a xi um R M S V o l a g e
m
t
M a xi um D C B l cki g V o l a g e
m
o
n
t
M a xi um A ve ra g e F o rw a rd C urre nt . 7 5 "(9 . m m )
m
3
5
l a d l ng t a t T c = 1 0 0
O
C
e
e
h
P e a k F o rw a rd S urg e C urre nt : . m s si g l ha l si e -
8 3
n e
f n
w a ve sup e ri p o se d o n ra t d l a d (JE D E C m e t o d )
m
e o
h
M a xi um F o rw a rd V o l a g e a t 8 . A
m
t
0
M a xi um D C R e ve rse C urre nt TA = 2 5
O
C
m
a t R a t d D C B l cki g V o l a g e TA = 1 0 0
O
C
e
o
n
t
Typ i a l T he rm a l R e si t nce
c
sa
O p e ra t ng Junct o n Te m p e ra t re R a ng
i
i
u
S t ra g e Te m p e ra t re R a ng
o
u
S Y M B O L S B 820 S B 830
V
RRM
V
RM S
V
DC
A
I
V
S B 840 S B 850 S B 860
40
28
40
50
35
50
8
150
60
42
60
S B 880 S B 8100 U N I S
T
80
56
80
100
70
100
V
V
V
A
A
20
14
20
30
21
30
F
I
SM
V
F
0. 5
5
0.
5
50
6
0. 5
7
0. 5
8
V
I
R
R
θ
JC
T
J
T
T
J
,
S TG
mA
O
C /W
O
-5 0 t + 1 2 5
o
-5 0 t + 1 5 0
o
C
C
O
NOTES:
Both Bonding and Chip structure are available.
STAD-JUN.25.2004
PAGE . 1
RATING AND CHARACTERISTIC CURVES
150
AVERAGE FORWARD CURRENT
AMPERES
10
8
6
4
2
0
0
50
100
O
PEAK FORWARD SURGE CURRENT
AMPERES
120
110
90
70
50
30
20
10
1
2
5
10
8.3ms Single
Half Since-Wave
JEDEC Method
150
CASE TEMPERATURE, C
20
50
100
NO. OF CYCLE AT 60HZ
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
10
INSTANTANEOUS REVERSE CURRENT, mA
40
INSTANTANEOUS FORWARD CURRENT
AMPERES
50V~60V
20V~40V
T
J
=100 C
1.0
O
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
.3
.4
.5
.6
.7
80V~100V
0.1
T
J
=75 C
O
0.01
T
J
=25 C
O
0.001
.8
.9
1.0
20
40
60
80
100
120
140
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTICS
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
STAD-JUN.25.2004
PAGE . 2
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