SBD20C100T/F/K_Datasheet
20A, 100V SCHOTTKY RECTIFIER
GENERAL DESCRIPTION
SBD20C100T/F/K is schottky rectifier fabricated in silicon
epitaxial
planar technology.
Typical
applications
are
in
switching power supplies and protection circuit etc.
FEATURES
∗
Guard ring for Stress Protection
∗
High Surge Capacity
∗
Low power loss , high efficiency
∗
Low forward voltage drop
ORDERING INFORMATION
Part No.
SBD20C100T
SBD20C100F
SBD20C100K
Package
TO-220-3L
TO-220F-3L
TO-262-3L
Marking
SBD20C100T
SBD20C100F
SBD20C100K
Material
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C unless otherwise noted)
Characteristics
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
FAV
I
FSM
T
J
T
STG
Value
100
20
150
150
-40~150
Unit
V
A
A
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
R
θJC
Value
2.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristics
Forward Voltage
Symbol
V
F
Test conditions
I
F
=10A (T
C
=25°C)
I
F
=10A(T
C
=125°C)
V
R
=100V(T
C
=25°C)
V
R
=100V(T
C
=125°C)
Min.
--
--
--
--
Max.
0.85
0.75
50
25
Unit
V
V
µA
mA
Reverse Current
I
R
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.7
2012.10.26
Page 1 of 5
Silan
Microelectronics
TYPICAL CHARACTERISTICS
Figure 1. Typical forward voltage
100
25°C
10
75°C
125°C
SBD20C100T/F/K_Datasheet
Figure 2. Typical reverse current
100
25°C
10
100°C
125°C
1
IR [mA]
0.2
0.3 0.4
0.5
0.6 0.7
0.8 0.9
1.0
1
I
F
[A]
0.1
0.1
0.01
0.01
0.1
0.001
0
20
40
60
80
100
V
F
[V]
V
R
[V]
Figure 3. Typical capacitance
1000
25
Figure 4. Average forward rectified current
DC
20
100
CT [pF]
IFAV [A]
10
F=1MHz
1
1
10
100
15
10
5
0
0
25
50
75
100
125
150
V
R
[V]
TC [°C]
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.7
2012.10.26
Page 2 of 5
Silan
Microelectronics
PACKAGE OUTLINE
TO-220-3L
10.0±0.3
SBD20C100T/F/K_Datasheet
UNIT: mm
4.5±0.2
1.2±0.2
6.10~7.00
15.1~16.1
3.95MAX
3.7±0.2
1.30±0.30
1.80~2.80
13.1±0.5
0.80±0.20
0.5±0.2
2.54TYP
TO-220F-3L
3.30±0.25
4.72±0.30
Φ3.20±0.20
2.55±0.25
UNIT: mm
10.03±0.30
15.80±0.50
1.47MAX
9.80±0.50
0.80±0.15
15.75±0.50
2.80±0.30
6.70±0.30
0.50±0.15
2.54 TYPE
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.7
2012.10.26
Page 3 of 5
Silan
Microelectronics
PACKAGE OUTLINE (continued)
TO-262-3L
1.26±0.06
10.20±0.08
8.84±0.05
SBD20C100T/F/K_Datasheet
UNIT: mm
4.70±0.08
1.27±0.03
3.78±0.20
1.27±0.05
2.69±0.10
8.76±0.05
0.81±0.05
0.42±0.05
0.38±0.02
2.54
5.08
Disclaimer:
•
Silan reserves the right to make changes to the information herein for the improvement of the design and
performance without further notice! Customers should obtain the latest relevant information before placing orders
and should verify that such information is complete and current.
•
All semiconductor products malfunction or fail with some probability under special conditions. When using Silan
products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with
the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of
such Silan products could cause loss of body injury or damage to property.
•
Silan will supply the best possible product for customers!
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.7
8.65±0.10
2012.10.26
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Microelectronics
ATTACHMENT
Revision History
Date
2010.06.09
2010.08.25
2010.10.09
2010.10.22
2011.09.01
2012.05.22
2012.09.28
2012.10.26
REV
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Original
SBD20C100T/F/K_Datasheet
Description
Page
Add TO-220-3L, TO-220F-3L package of youyi; Add TO-220-3L package
of kangbi
Add TO-220F-3L package of kangbi
Modify the template of datasheet
Modify “PACKAGE OUTLINE”
Add the curve of “Average Forward Rectified Current ”
Modify figure 4
Add the package of TO-262-3L
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.7
2012.10.26
Page 5 of 5
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