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SBL1030

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:台湾光宝(LITEON)

厂商官网:http://optoelectronics.liteon.com/en-global/Home/index

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
台湾光宝(LITEON)
零件包装代码
TO-220AC
包装说明
TO-220AC, 2 PIN
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE
应用
EFFICIENCY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.6 V
JEDEC-95代码
TO-220AC
JESD-30 代码
R-PSFM-T2
最大非重复峰值正向电流
250 A
元件数量
1
相数
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-55 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
255
认证状态
Not Qualified
最大重复峰值反向电压
30 V
表面贴装
NO
技术
SCHOTTKY
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
LITE-ON
SEMICONDUCTOR
SBL1030 thru SBL1060
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 10
Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
B
C
K
PIN
1
2
TO-220AC
L
M
D
A
E
TO-220AC
MIN.
DIM.
MAX.
14.22
15.88
A
10.67
B
9.65
3.43
C
2.54
D
6.86
5.84
9.28
8.26
E
6.35
F
-
14.73
12.70
G
H
5.33
4.83
0.51
1.14
0.30
0.64
3.53
4.09
L
3.56
4.83
M
1.14
1.40
2.92
N
2.03
All Dimensions in millimeter
I
J
K
F
G
I
H
J
N
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
PIN 1
PIN 2
CASE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
SYMBOL
SBL1030 SBL1035 SBL1040 SBL1045 SBL1050
SBL1060
60
42
60
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
30
21
30
35
24.5
35
40
28
40
10
250
0.60
1
50
500
2.5
45
31.5
45
50
35
50
@T
C
=95
C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Forward Voltage
at 10A DC (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
I
FSM
V
F
A
0.75
V
mA
pF
C/W
@T
J
=25 C
@T
J
=100 C
I
R
C
J
R
0JC
T
J
T
STG
-55 to +125
-55 to +150
C
C
REV. 3, 13-Sep-2001, KTHA07
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Case.
RATING AND CHARACTERISTIC CURVES
SBL1030 thru SBL1060
AVERAGE FORWARD CURRENT
AMPERES
10
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300
250
200
150
100
50
0
1
2
5
10
20
50
100
8
6
4
RESISTIVE OR
INDUCTIVE LOAD
2
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
100
SBL1030 ~ SBL1045
10
10
T
J
= 100 C
SBL1050 ~ SBL1060
T
J
= 75 C
1.0
1.0
T
J
= 25 C
0.1
T
J
= 25 C
PULSE WIDTH 300ua
300us
2% Duty cycle
0.01
0
20
40
60
80
100
120
140
0.1
0.1
0.2
0.3
0.4
0.5
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
CAPACITANCE , (pF)
1000
T
J
= 25 C, f= 1MHz
100
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
REV. 3, 13-Sep-2001, KTHA07
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