JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220A Plastic-Encapsulate Diodes
SBL1030,35,40,45,50,60
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Value
Symbol
Parameter
SBL
1030
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current@ T
c
=95℃
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
21
24.5
28
10
250
2
50
125
-55~+150
31.5
35
42
V
A
A
W
℃/W
℃
℃
30
35
40
45
50
60
V
SBL
1035
SBL
1040
SBL
1045
SBL
1050
SBL
1060
Unit
TO-220A
1. CATHODE
2. ANODE
A,Nov,2010
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Device
SBL1030
SBL1035
Reverse voltage
V
(BR)
SBL1040
SBL1045
SBL1050
SBL1060
SBL1030
SBL1035
Reverse current
I
R
SBL1040
SBL1045
SBL1050
SBL1060
Forward voltage
V
F
SBL1030-1045
SBL1050,1060
V
R
=30V
V
R
=35V
V
R
=40V
V
R
=45V
V
R
=50V
V
R
=60V
I
F
=10A
0.55
0.7
V
0.45
mA
I
R
=0.5mA
Test conditions
Min
30
35
40
45
50
60
V
Typ
Max
Unit
A,Nov,2010
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