JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
SBL2030, 35, 40, 45, 50FCT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Value
Symbol
Parameter
SBL20
30FCT
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
21
24.5
20
150
2
50
125
-55~+150
28
31.5
35
V
A
A
W
℃/W
℃
℃
30
35
40
45
50
V
SBL20
35FCT
SBL20
40FCT
SBL20
45FCT
SBL 20
50FCT
Unit
TO-220F
1. ANODE
2. CATHODE
3. ANODE
A,Nov,2010
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
Device
SBL2030FCT
SBL2035FCT
Reverse voltage
V
(BR)
SBL2040FCT
SBL2045FCT
SBL2050FCT
SBL2030FCT
SBL2035FCT
Reverse current
I
R
SBL2040FCT
SBL2045FCT
SBL2050FCT
Forward voltage
Typical total capacitance
V
F
C
tot
SBL2030FCT-2045FCT
SBL2050FCT
SBL2030-2050FCT
V
R
=4V,f=1MHz
600
V
R
=30V
V
R
=35V
V
R
=40V
V
R
=45V
V
R
=50V
I
F
=10A
0.55
0.75
pF
V
0.45
mA
I
R
=0.5mA
Test conditions
Min
30
35
40
45
50
V
Typ
Max
Unit
A,Nov,2010
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