JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
SBL2080FCT
SCHOTTKY BARRIER RECTIFIER
TO-220F
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
D
R
ΘJA
T
j
T
stg
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
1. ANODE
2. CATHODE
3. ANODE
Value
Unit
80
V
56
20
150
2
50
125
-55~+150
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Typical total capacitance
Symbol
V
(BR)
I
R
V
F
C
tot
Test conditions
I
R
=0.5mA
V
R
=80V
I
F
=10A
V
R
=4V,f=1MHz
600
Min
80
0.45
0.75
Typ
Max
Unit
V
mA
V
pF
A,Nov,2010
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