SBM1060VFCT
ULTRA LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Ultra Low forward voltage drop, low power losses
• High efficiency operation
• Lead free in comply with EU RoHS 2011/65/EU directives
60 Volts
CURRENT
10 Amperes
0.112(2.85)
0.100(2.55)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.272(6.9)
0.248(6.3)
0.606(15.4)
0.583(14.8)
Case : ITO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight : 0.056 ounces, 1.6 grams.
0.177(4.5)
0.137(3.5)
0.543(13.8)
0.512(13.0)
MECHANICAL DATA
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified current
Peak forward surge current : 8.3ms single half
sine-wave superimposed on rated load
Typical junction capacitance (V
R
=4V, f=1MHz)
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
( No te 1 )
per device
per diode
per diode
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
C
J
R
JC
T
J
T
STG
VALUE
60
42
60
10
5
120
300
15
-55 to + 150
-55 to + 150
0.128(3.25)
MIN.
UNIT
V
V
V
A
A
pF
O
C /W
o
C
C
o
Note : 1. Mounted on infinite heatsink.
August 20,2013-REV.00
PAGE . 1
SBM1060VFCT
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=0.5mA
I
F
=1A
I
F
=3A
I
F
=5A
I
F
=1A
I
F
=3A
V
R
=48V
T
J
=25 C
T
J
=125
o
C
o
MIN.
60
-
-
-
-
-
-
TYP.
-
0.32
0.4
0.46
0.24
0.36
40
-
12
MAX.
-
-
-
0.52
-
-
-
220
-
UNIT
V
V
V
A
A
mA
Instantaneous forward voltage per
diode
V
F
Reverse current per diode
I
R
V
R
=60V
T
J
=25
o
C
T
J
=125
o
C
-
-
5
4
3
2
1
0
0
Per Diode
25
50
75
100
125
150
C
J
, Junction Capacitance (pF)
I
F
, Forward Current (A)
6
10000
1000
100
10
1
Per Diode
1
10
100
T
C
, Case Temperature (°C)
V
R
, Reverse Bias Voltage (V)
Fig.1 Forward Current Derating Curve
100
Fig.2 Typical Junction Capacitance
10
I
R
, Reverse Current (mA)
I
F
, Forward Current (A)
T
J
= 150°C
10
T
J
= 125°C
1
T
J
= 75°C
0.1
Per Diode
T
J
= 25°C
20
40
60
80
100
T
J
= 150°C
1
T
J
= 125°C
0.1
T
J
= 75°C
T
J
= 25°C
0.01
0
0.2
0.4
Per Diode
0.6
0.8
0.01
Percent of Rated Peak Reverse Voltage (%)
V
F
, Forward Voltage (V)
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
August 20,2013-REV.00
PAGE . 2
SBM1060VFCT
Part No_packing code_Version
SBM1060VFCT_T0_00001
SBM1060VFCT_T0_10001
For example :
RB500V-40_R2_00001
Part No.
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code
XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
1
st
Code
A
R
B
T
S
L
F
Packing size code
N/A
7"
13"
26mm
52mm
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
Version Code
XXXXX
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
0
1
2
X
Y
U
D
HF
RoHS
0
1
serial number
serial number
August 20,2013-REV.00
PAGE . 3
SBM1060VFCT
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•
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of fitness for particular purpose, non-infringement and merchantability.
•
Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Panjit International Inc. makes no representation or warranty that such applications will be
suitable for the specified use without further testing or modification.
•
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving
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se
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August 20,2013-REV.00
PAGE . 4
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