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SD10100CS

10 A, 100 V, SILICON, RECTIFIER DIODE, TO-252

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
Reach Compliance Code
_compli
ECCN代码
EAR99
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.85 V
最大非重复峰值正向电流
100 A
最高工作温度
125 °C
最大输出电流
10 A
最大重复峰值反向电压
100 V
表面贴装
YES
技术
SCHOTTKY
文档预览
DATA SHEET
SD1020CS~SD10150CS
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Low power loss, High efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
• Pb free product are available : 99% Sn above can meet Rohs environment
substance diective request
.063(1.6)
.047(1.2)
.264(6.7)
.248(6.3)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
20 to 150 Volts
CURRENT
10.0 Amperes
TO-252 / DPAK
Unit : inch (mm)
• Built-in strain relief
.216(5.5)
.200(5.1)
.225(5.7)
.209(5.3)
.106(2.7)
.090(2.3)
MECHANICALDATA
Case: TO-252 molded plastic
Terminals: Solder plated, solderable per MIL-STD-202G,Method 208
Polarity: As marking
Weight: 0.015 ounces, 0.4grams.
.09 .09
(2.3) (2.3)
.032(0.8)
.012(0.3)
.071(1.8)
.051(1.3)
0.040(1.0)
.02(0.5)
C
MAXIMUM RATINGS AND DELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PAR AME T E R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d R e c t i f i e d C ur r e nt
. 3 7 5 " ( 9 . 5 m m ) l e a d l e n g t h a t Tc = 1 0 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a x i m u m In s t a n t a n e o u s F o r w a r d V o l t a g e a t 5 . 0 A p e r
le g
M a xi m um D C R e ve r s e C ur r e nt T
A
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
A
= 1 0 0
O
C
M a xi m um The r m a l R e s i s t a nc e
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
S YM B OL S D 1 0 2 0 C S S D 1 0 3 0 C S S D 1 0 4 0 C S S D 1 0 5 0 C S S D 1 0 6 0 C S S D 1 0 8 0 C S S D 1 0 1 0 0 C S S D 1 0 1 5 0 C S U N IT S
V
RRM
V
RMS
V
DC
I
AV
I
FSM
V
F
I
R
RθJ C
RθJ A
T
J
T
STG
0 .5 5
20
14
20
30
21
30
40
28
40
50
35
50
1 0 .0
100
0 .7 5
0 .2
20
3 .0
80
-5 0 to +1 2 5
-5 0 to +1 5 0
O
60
42
60
80
56
80
100
70
100
150
105
150
V
V
V
A
A
0 .8 5
0 .9 2
V
mA
C /W
O
C
C
O
NOTES:
1. Both Bonding and Chip structure are available.
REV.0-MAR.19.2005
PAGE . 1
RATING AND CHARACTERISTIC CURVES
AVERAGE FORWARD CURRENT
25.0
20.0
15.0
10.0
5.0
0
0
PEAK FORWARDSURGE CURRENT,
AMPERES
120
100
80
60
40
20
50
100
O
150
0
1
10
NO. OF CYCLE AT 60HZ
100
CASE TEMPERA
TURE, C
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2-MAXIMUMNON-REPETITIVEPEAK
FORWARD SURGE CURRENT
10
2
10
10
1
REVERSE CURRENT, mA
T
J
=100
O
C
10
0
FORWARD CURRENT, AMPERES
V
RRM
=20-40V
V
RRM
=50-60V
V
RRM
=80-100V
20-40V
50-60V
80-100V
10
-1
1.0
10
-2
T
J
=
25
C
O
10
-3
T
A
=25
O
C
10
-4
20
40
60
80
100
120
0.1
0.2
0.4
0.6
0.8
1.0
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FORWARD VOLTAGE, VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTIC
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHRACTERISTIC
REV.0-MAR.19.2005
PAGE . 2
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