SD101AWS-SD101CWS
SCHOTTKY DIODES
SOD-323
1.35(0.053)
1.15(0.045)
1.26(.050)
1.24(.048)
FEATURES
Low forward voltage drop
Guard ring construction for transient protection
Negligible reverse recovery time
1.80(0.071)
1.60(0.063)
2.70(0.106)
2.30(0.091)
1.80(0.071)
1.60(0.063)
2.70(0.106)
2.30(0.091)
MECHANICAL DATA
0.4(0.016)
.25(0.010)
.177(.007)
.089(.003)
1.00(.040)
0.80(.031)
0.1(0.004)
MIN
.305(0.012)
.295(0.010)
.72(0.028)
.69(0.027)
.08(.003)
MIN
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Marking: SD101AWS:S1, SD101BWS:S2, SD101CWS:S3
Dimensions in millimeters and (inches)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and electrical characteristics, Single diode @T
A
=25*
PARAMETER
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking voltage
RMS Reverse voltage
Forward continuous current
Repetitive peak forward current @t<1.0s
@t=10
*
s
Power dissipation
Thermal resistance junction to ambient
Storage temperature
Electrical ratings @T
A
=25*
PARAMETER
Reverse breakdown voltage
Fowrard voltage
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SYMBOLS
SYMBOLS
SD101AWS
60
42
SD101BWS
50
35
15
50
2.0
200
300
-65 to +125
SD101CWS
40
28
UNITS
VOLTS
V
mA
mA
A
mW
*/W
*
V
RRM
V
RMS
V
DC
V
R(RMS)
I
FM
I
FRM
Pd
R
ΘJA
T
STG
V
(BR)R
Min.
60
50
40
Typ.
Max.
Unit
V
V
F
0.41
0.40
0.39
1.00
0.95
0.90
0.2
2.0
2.1
2.2
1.0
V
Reverse current
Capacitance between terminals
Reverse recovery time
I
RM
*A
pF
ns
Conditions
I
R
=10*A
I
R
=10*A
I
R
=10*A
I
F
=1.0mA
I
F
=1.0mA
I
F
=1.0mA
I
F
=15mA
I
F
=15mA
I
F
=15mA
V
R
=50V
V
R
=40V
V
R
=30V
V
R
=0V,f=1.0MHz
I
F
=I
R
=5mA
Irr=0.1XI
R
,R
L
=100*
C
T
t
rr
R
336
LING JIE
STAR SEA
ELECTRONICS CO.,LTD.
RATINGS AND CHARACTERISTIC CURVES SD101AWS-SD101CWS
FIG. 1- POWER DERATING CURVE
500
See Note1
10
FIG. 2-TYPICAL FORWARD CHARACTERISTIC
P
d
.POWER DISSIPATION (mW)
I
F
,FORWARD CURRENT(mA)
400
A
B
C
1.0
300
200
0.1
100
0
0
0.01
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
T
A
,AMBIENT TEMPERATURE(
*
)
V
R
REVERSE VOLTAGE.(V)
FIG.3- TYPICAL TOTAL CAPACITANCE
VS REVERSE VOLTAGE
2
T
j
=25
*
f=1MHz
10
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
T
A
=125*
1
C
T
, TOTAL CAPACITANCE(pF)
C
I
R
,REVERSE CURRENT(
*
A)
B
A
T
A
=75*
0.1
1
T
A
=25*
0.01
T
A
=0*
0.001
T
A
=-65*
0
0
10
20
30
40
50
0.0001
0
10
20
30
40
50
60
V
R
REVERSE VOLTAGE.(V)
V
R
REVERSE VOLTAGE.(V)
R
337
LING JIE
STAR SEA
ELECTRONICS CO.,LTD.
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