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SD103AW

0.4 A, SILICON, SIGNAL DIODE
0.4 A, 硅, 信号二极管

器件类别:半导体    分立半导体   

厂商名称:南晶电子(DGNJDZ)

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器件:SD103AW

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器件参数
参数名称
属性值
端子数量
2
元件数量
1
状态
ACTIVE
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子涂层
TIN LEAD
端子位置
DUAL
包装材料
PLASTIC/EPOXY
工艺
SCHOTTKY
结构
SINGLE
二极管元件材料
SILICON
最大功耗极限
0.4000 W
二极管类型
SIGNAL DIODE
反向恢复时间最大
0.0100 us
最大平均正向电流
0.4000 A
文档预览
SD103AW…SD103CW
Surface Mount Schottky Barrier Diodes
PINNING
PIN
1
DESCRIPTION
Cathode
Anode
2
Features
• Low Forward Voltage
1
2
S4
Top View
Marking Code:
S4
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Repetitive Reverse Voltage
Reverse Voltage
SD103AW
SD103BW
SD103CW
SD103AW
SD103BW
SD103CW
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
P
tot
T
j
, T
stg
Value
40
30
20
40
30
20
350
2
400
- 65 to + 125
Unit
V
V
mA
A
mW
O
Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current at t = 1 s
Power Dissipation
Operating and Storage Temperature Range
C
Characteristics at T
a
= 25
O
C
Parameter
Reverse Breakdown Voltage
at I
R
= 10 µA
SD103AW
SD103BW
SD103CW
SD103AW
SD103BW
SD103CW
Symbol
V
(BR)R
Min.
40
30
20
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
50
10
Max.
-
-
-
5
5
5
0.37
0.6
-
-
Unit
V
Reverse Leakage Current
at V
R
= 30 V
at V
R
= 20 V
at V
R
= 10 V
Forward Voltage
at I
F
= 20 mA
at I
F
= 200 mA
Total Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 200 mA, I
rr
= 0.1 I
R
, R
L
= 100
I
R
µA
V
F
C
T
t
rr
V
pF
ns
SD103AW…SD103CW
SD103AW…SD103CW
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
ALL ROUND
c
H
E
D
A
E
b
p
UNIT
mm
A
1.15
1.05
b
p
0.6
0.5
c
0.135
0.127
A
D
2.7
2.6
E
1.65
1.55
H
E
3.9
3.7
v
0.2
5
O
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