SE100P60
P-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and
low operation voltage. This device is
suitable for using as a load switch or in
PWM applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Pin configurations
See Diagram below
Features
For a single MOSFET
V
DS
= -100V
R
DS(ON)
=18mΩ @ V
GS
=-10V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
-100
±25
-60
-240
188
-55 to 150
Units
V
V
A
W
℃
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE100P60
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
I
D
=-250μA, V
GS
=0 V
V
DS
= -100V, V
GS
=0V
V
GS
= 25V
V
DS
= V
GS
, I
D
=-250μA
V
GS
=-10V, I
D
=-60A
V
DS
=-50V, I
D
=-10A
-2
-
5
18
-100
-1
100
-4
25
V
μA
μA
V
mΩ
S
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-50V,
f=1MHz
4200
615
380
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-50V,
R
GEN
=6Ω,
V
GS
=-10V, V
DS
=-80V,
I
D
=-60A
90
15
35
27
145
83
40
nC
nC
nC
ns
ns
ns
ns
Thermal Resistance
Symbol
R
θJC
Parameter
Junction to Case
Typ
-
Max
1.25
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE100P60
Test Circuits and Waveform
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE100P60
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE100P60
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
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