SE120120G
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
This device used advanced semiconductor
technology and design to provide excellent RDS(ON)
with low gate charge and low operation voltage. It can
be used in wide variety of application
Excellent package for superior thermal resistance
Optimized technology for DC/DC converters
Easy to use and parallel
Pin configurations
See Diagram below
Features
For a single MOSFET
V
DS
= 120V
R
DS(ON)
= 4.4mΩ @ V
GS
=10V
TO-263
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
Rating
120
±20
129
480
1000
185
-55 to 175
Units
V
V
A
mJ
W
℃
Single Pulse Avalanche Energy
Total Power Dissipation
@TC=25℃
Operating Junction Temperature Range
Thermal Resistance
Symbol
R
θJC
Parameter
Thermal Resistance Junction to Case(t≤10s)
Typ
-
Max
0.8
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE120120G
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
I
D
=250μA, V
GS
=0 V
V
DS
=120V, V
GS
=0V
V
GS
=20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=60A
V
DS
=10V, I
D
=60A
2.5
-
60
3.3
4.4
120
1
100
4.5
6.1
V
μA
nA
V
mΩ
S
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=50V,
f=1MHz
5600
641
28
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=10V,
I
D
=60A
V
GS
=10V, V
DS
=60,
I
D
=60A
V
DS
=60V,
84.7
30.6
18.3
16
45
67
14
nC
nC
nC
ns
ns
ns
ns
Source-Drain Ratings and Characteristics
I
S
V
SD
trr
Qrr
Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
=0V,I
S
=129A
TJ=25℃, IF=IS
Di/dt=100A/μs
60
140
129
1.2
A
V
ns
nC
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE120120G
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE120120G
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE120120G
Package Outline Dimension
TO-220
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
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