Mar 2015
SE1216
P-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and low
operation voltage. This device is suitable for
using as a load switch or in PWM applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
V
DS
= -12V
R
DS(ON)
= 11mΩ @ V
GS
=-4.5V
R
DS(ON)
= 14mΩ @ V
GS
=-2.5V
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
-12
±12
-21
-28
2.4
-55 to 150
Units
V
V
A
W
℃
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE1216
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
2
I
D
=250μA, V
GS
=0 V
V
DS
= -12V, V
GS
=0V
V
GS
=12V
V
DS
= V
GS
, I
D
=250μA
V
GS
=-4.5V, I
D
=-6.7A
V
GS
=-2.5V, I
D
=-6.2A
-12
-1
100
-0.4
-
-0.7
11
14
-1
18
22
V
μA
nA
V
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-6V,
f=1MHz
-
-
-
2138
685
650
-
-
-
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=-4.5V, V
DS
=-6V,
R
GEN
=6Ω, I
D
=-10A
V
GS
=-4.5V, V
DS
=-6V,
I
D
=-10A
-
-
-
21
2.5
6
30
97
48
65
-
-
-
nC
nC
nC
ns
ns
ns
ns
Thermal Resistance
Symbol
R
θJC
R
θJA
Parameter
Junction to Case
Junction to Ambient (t≦10s)
Typ
6.9
52
Max
8
62.5
Units
℃/W
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE1216
Package Outline Dimension
DFN2 × 2-6L
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE1216
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics
Co., Ltd.
© 2005 SINO-IC - Printed in China - All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add: Building 3, Room 3401-03, No.200 Zhangheng Road,
ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China
Phone:
+86-21-33932402
33932403
33932405 33933508 33933608
Fax: +86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
电子工程世界
