SE150110G
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and
low operation voltage. This device is
suitable for using as a load switch or in
PWM applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Pin configurations
See Diagram below
Features
For a single MOSFET
V
DS
= 150V
R
DS(ON)
= 6mΩ @ V
GS
=10V
TO-263
TO-247
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Symbol
V
DS
V
GS
I
D
E
AS
P
D
T
J
Rating
150
±20
110
440
1296
300
-55 to 175
Units
V
V
A
mJ
W
℃
Single pulse avalanche energy
Total Power Dissipation
@TA=25℃
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE150110G
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
I
D
=250μA, V
GS
=0 V
V
DS
=150V, V
GS
=0V
V
GS
=20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=55A
V
DS
=10V, I
D
=55A
2
-
70
3
6
150
1
100
4
7.8
V
μA
nA
V
mΩ
S
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=75V,
f=1MHz
10000
2046
55
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=10V,
I
D
=55A
V
GS
=10V, V
DS
=75V,
R
GEN
=4.7Ω
I
D
=55A
V
DS
=75V,
150
50
26
30
69
52
21
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Characteristics
V
SD
I
S
t
rr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Diode Forward Voltage
V
GS
=0V,I
S
=110A
1.2
110
V
A
ns
nC
TJ=25℃，I
F
=I
S
Di/dt=100A/μs
140
498
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE150110G
Test Circuits and Waveform
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE150110G
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE150110G
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
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