SE30P12D
P-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Advanced trench technology to provide
excellent RDS(ON), low gate charge and low
operation voltage. This device is suitable for
using as a load switch or in PWM applications.
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
V
DS
= -30V
R
DS(ON)
= 11.5mΩ @ V
GS
=-10V
R
DS(ON)
= 18mΩ @ V
GS
=-4.5V
Pin configurations
See Diagram below
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
T
J
Rating
-30
±20
-12
-50
2
-55 to 150
Units
V
V
A
W
℃
Operating Junction Temperature Range
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE30P12D
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
2
I
D
=-250μA, V
GS
=0 V
V
DS
= -24V, V
GS
=0V
V
GS
= 20V
V
DS
= V
GS
, I
D
=-250μA
V
GS
=-10V, I
D
=-10A
V
GS
=-4.5V, I
D
=-7A
-30
-33
-5
100
V
μA
nA
V
mΩ
mΩ
-1
-
-1.5
11.5
18
-3
15
25
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V,
f=1MHz
V
DS
=-15V,
5270
945
745
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=-10V,
I
D
=-15A
V
GS
=-10V, V
DS
=-15V,
R
GEN
=3Ω, R
L
=1Ω
V
DS
=-15V,
100
14.5
23
14
76.5
16.5
37.5
nC
nC
nC
ns
ns
ns
ns
Thermal Resistance
Symbol
R
θJA
Parameter
Junction to Ambient (t≦10s)
Typ
26
Max
40
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE30P12D
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE30P12D
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE30P12D
Package Outline Dimension
DFN3X3
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics
Co., Ltd.
© 2005 SINO-IC - Printed in China - All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add: Building 3, Room 3401-03, No.200 Zhangheng Road,
ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China
Phone:
+86-21-33932402
33932403
33932405 33933508 33933608
Fax: +86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
电子工程世界
