Apr 2014
SE4020B
N-Channel Enhancement-Mode MOSFET
Revision: A
General Description
Thigh Density Cell Design For Ultra Low
On-Resistance Fully Characterized Avalanche
Voltage and Current Improved Shoot-Through
FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
For a single MOSFET
V
DS
= 40V
R
DS(ON)
= 15mΩ @ V
GS
=10V
Pin configurations
See Diagram below
TO-252
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Continuous
Pulsed
1
@TA=25℃
Symbol
V
DS
V
GS
I
D
P
D
EAS
IAR
T
J
Rating
40
±20
20
40
20
22
10
-55 to 175
Units
V
V
A
W
mJ
A
℃
Single Pulse Avalanche Energy
2
Avalanche Current@L=0.3mH
Operating Junction Temperature Range
Thermal Resistance
Symbol
R
θJC
Parameter
Thermal Resistance Junction to Case
Typ
-
Max
7.5
Units
℃/W
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SE4020B
Electrical Characteristics
Symbol
(TJ=25℃ unless otherwise noted)
Test Conditions
Min
Typ
Max
Units
Parameter
OFF CHARACTERISTICS (Note 2)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Drain to Source Leakage Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
I
D
=250μA, V
GS
=0 V
V
DS
= 40V, V
GS
=0V
V
GS
=20V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=5A
1
-
15
40
1
100
2
23
V
μA
nA
V
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=20V,
f=1MHz
410
95
35
pF
pF
pF
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
d(on)
t
d(off)
t
d(r)
t
d(f)
Total Gate Charge
2
Gate Source Charge
Gate Drain Charge
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
V
GS
=10V, V
DS
=20V,
R
GEN
=1.7Ω
I
D
=12A
V
GS
=10V,
I
D
=12A
V
DS
=20V,
9.5
4.5
1.5
3.5
13.5
6
3.5
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode
Symbol
I
S
VSD
trr
Qrr
Parameter
Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Condition
IF=1A, VDD=20V,
dI/dt=100A/μs
IF=12A, VDD=20V,
dI/dt=100A/μs
0.75
23
18.5
Min
Typ
Max
12
1.0
Units
A
V
ns
nC
Note 1: Repetitive rating: pulse width limited by max. junction temperature
Note 2: Limited by TJmax, starting TJ=25℃, L=0.3mH, RG=50Ω, IAS=82A, VGS=10V.
Note 3: Pulse width < 1.0ms; duty cycle<2%.
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SE4020B
Test Circuits and Waveform
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
SE4020B
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
4.
SE4020B
Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd.
5.
电子工程世界
